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BAV70T 반도체 회로 부품 판매점

SILICON EPITAXIAL PLANAR DIODE



KEC 로고
KEC
BAV70T 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: ESM.
Low Forward Voltage
: VF=0.9V (Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=0.9pF (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
VRM
85
Reverse Voltage
VR 80
Continuous Forward Current
IF 150
Surge Current (10ms)
IFSM
2
Power Dissipation
PD 200 *
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
UNIT
V
V
mA
A
mW
BAV70T
SILICON EPITAXIAL PLANAR DIODE
E
B
2
13
DIM MILLIMETERS
A 1.60+_ 0.10
D B 0.85+_ 0.10
C 0.70+_ 0.10
D 0.27+0.10/-0.05
E 1.60+_ 0.10
G 1.00+_ 0.10
H 0.50
J 0.13+_ 0.05
J
1. ANODE 1
2. ANODE 2
3. CATHODE
3
21
ESM
Marking
H2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
VF(1)
VF(2)
VF(3)
IR
CT
Reverse Recovery Time
trr
TEST CONDITION
IF=1mA
IF=10mA
IF=150mA
VR=80V
VR=0, f=1MHz
IF=10mA
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
-
-
-
-
MAX.
-
-
1.25
0.5
3.0
4.0
UNIT
V
A
pF
nS
2009. 1. 23
Revision No : 1
1/2


BAV70T 데이터시트, 핀배열, 회로
BAV70T
10 3
10 2
10
1
10 -1
10 -2
0
IF - VF
0.2 0.4 0.6 0.8 1.0
FORWARD VOLTAGE VF (V)
1.2
IR - VR
10
1 Ta=100 C
Ta=75 C
10-1 Ta=50 C
10-2 Ta=25 C
10-3
0
20 40 60
REVERSE VOLTAGE VR (V)
80
C T - VR
2.0
f=1MHz
Ta=25 C
1.6
1.2
0.8
0.4
0
0.1
0.3 1
3 10 30
REVERSE VOLTAGE VR (R)
100
t rr - I F
100
Ta=25 C
50 Fig. 1
30
10
5
3
1
0.5
0.1
0.3 1
3 10 30
FORWARD CURRENT IF (mA)
100
Fig. 1. REVERSE RECOVERY TIME(trr ) TEST CIRCUIT
INPUT
WAVEFORM
0
INPUT 0.01µF
DUT
-6V
50ns
E
OUTPUT
SAMPLING
OSCILLOSCOPE
(RIN =50)
IF =10mA
0
IR
PULSE GENERATOR
(ROUT =50)
2009. 1. 23
Revision No : 1
WAVEFORM
0.1 IR
t rr
2/2




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BAV70T diode

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