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JCET |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
BAW56T/BAV70T/BAV99T SWITCHING DIODE
FEATURES
z Fast Switching Speed
z For General Purpose Switching Applications
z High Conductance
BAW56T
BAV70 T
BAV99T
SOT-523
MARKING:JD
JD
MARKING:JJ
JJ
MARKING:JE
JE
JD JJ
JE
Solid dot = Green molding compound device,
if none, the normal device
Maximum Ratings @Ta=25℃
Parameter
Reverse Voltage
Forward Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
VR
IF
IFSM
PD
RθJA
TJ
TSTG
Limit
85
75
2.0
150
833
150
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse breakdown voltage
V(BR)
IR= 1μA
Reverse voltage leakage current
IR1 VR=75V
IR2 VR=25V
Forward voltage
Diode capacitance
Reverse recovery time
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
CD VR=0 f=1MHz
t rr
IF=IR=10mA
Irr=0.1×IR,RL=100Ω
Min
85
Max
2
0.03
715
855
1000
1250
1.5
4
Unit
V
mA
A
mW
℃/W
℃
℃
Unit
V
μA
μA
mV
pF
ns
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B,Oct,2014
Typical Characteristics
Forward Characteristics
300
100
30
10
3
1
0.3
0.1
0.0
0.4 0.8 1.2
FORWARD VOLTAGE V (V)
F
1.6
10000
3000
1000
300
100
30
10
3
1
0
Reverse Characteristics
T =100℃
a
T =25℃
a
20 40 60 80
REVERSE VOLTAGE V (V)
R
100
Capacitance Characteristics
1.6
T =25℃
a
f=1MHz
1.4
1.2
1.0
0.8
0.6
0 4 8 12 16 20
REVERSE VOLTAGE V (V)
R
Power Derating Curve
200
150
100
50
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE T (℃)
a
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B,Oct,2014
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