BAV170 반도체 회로 부품 판매점
Switching Diode
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 JCET |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAV170
Switching Diode
FEATURES
Low Leakage Current
High Switching Speed
APPLICATION
Low-leakage Current Applications
in Surface Mounted Circuits
MARKING:JX
-
JX
SOT-23
++
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
VR
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Current(single diode )
IF
Forward Current(double diode )
IFRM Repetitive Peak Forward Current
IFSM Non-repetitive Peak Forward Surge Current@ t =8.3ms
PD Power Dissipation
RΘJA Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature
Value
85
75
215
125
500
1.0
250
500
150
-55~+150
Unit
V
V
mA
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max
Reverse voltage
Reverse current
V(BR)
IR
IR=100μA
VR=75V
75
5
IF=1mA
0.9
Forward voltage
IF=10mA
VF
IF=50mA
1
1.1
IF=150mA
1.25
Total capacitance
Reverse recovery time
Ctot VR=0,f=1MHz
trr IF= IR=10mA, Irr=0.1×IR, RL=100Ω
2
3
Unit
V
nA
V
pF
μs
www.cj-elec.com
1
B,Oct,2014
Typical Characteristics
Forward Characteristics
500
100
10
Reverse Characteristics
0.8
T =100 ℃
a
0.6
T =25 ℃
a
0.4
1
0.4 0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE V (V)
F
Capacitance Characteristics
2.5
T =25℃
a
f=1MHz
2.0
1.5
1.0
0.5
0.0
0
5 10 15 20
REVERSE VOLTAGE V (V)
R
0.2
0
17 34 51 68
REVERSE VOLTAGE V (V)
R
85
Power Derating Curve
300
250
200
150
100
50
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta (℃)
www.cj-elec.com
2
B,Oct,2014
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BAV170 diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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