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JCET |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS193
Switching Diode
FEATURES
y Low forward voltage
y Fast reverse recovery time
MARKING: F3
F3 F3
SOT-23
1
3
2
Solid dot = Green molding compound device,if none,the normal device.
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IFM
IO
IFSM
PD
RθJA
TJ
TSTG
Limit
85
80
300
100
2.0
150
833
150
-55~+150
Unit
V
V
mA
mA
A
mW
℃/W
℃
℃
Electrical Characteristics @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol Min Typ Max Unit
Conditions
V(BR)
80
V IR=100μA
VF1
0.60
V IF=1mA
VF2
0.72
V IF=10mA
VF3
0.90 1.2
V IF=100mA
IR1 0.1 uA VR=30V
IR2 0.5 uA VR=80V
CT 0.9 3.0 pF VR=0,f=1MHz
t rr 1.6 4.0 ns IF=IR=10mA,Irr=0.1×IR
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1
B,Aug,2014
Typical Characteristics
Forward Characteristics
100
30
10
3
1
0.3
0.1
0.03
0.01
0.0
0.2 0.4 0.6 0.8 1.0
FORWARD VOLTAGE V (V)
F
1.2
1000
300
100
30
10
3
1
0
Reverse Characteristics
Ta=100℃
Ta=25℃
20 40 60
REVERSE VOLTAGE V (V)
R
80
Capacitance Characteristics
1.2
Ta=25℃
f=1MHz
1.1
1.0
0.9
0.8
0
5 10 15
REVERSE VOLTAGE V (V)
R
20
Power Derating Curve
200
150
100
50
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta (℃)
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B,Aug,2014
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