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MDD |
B5817WS-B5819WS
Schottky Barrier Diode
FEATURES
z Extremely low VF
z Low stored change,majority carrier
conduction
z Low power loss/high efficient
Pb
Lead-free
APPLICATIONS
z For Use In Low Voltage, High Frequency Inverters
z Free Wheeling, And Polarity Protection Applications
SOD-323
ORDERING INFORMATION
Type No.
Marking
B5817WS
B5818WS
B5819WS
SJ
SK
SL
Package Code
SOD-323
SOD-323
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
symbol B5817WS B5818WS B5819WS Unit
Non-Repetitive Peak reverse voltage
VRM
20
30
40
V
Peak repetitive Peak reverse voltage
VRRM
Working Peak Reverse voltage
VRWM
20
30
40
V
DC Reverse Voltage
VR
RMS Reverse Voltage
VR(RMS)
14
21
28
V
Average Rectified output Current
Io 1
A
Peak forward surge current@=8.3ms
IFSM
20
A
Power Dissipation
Pd 235
mW
Thermal Resistance Junction to Ambient RθJA
426
℃/W
Storage temperature
TSTG
-55 to +150
℃
B5817WS-B5819WS
Schottky Barrier Diode
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Symbol Test Condition
IR=1mA
V(BR)
Reverse voltage leakage current IR
Forward voltage
Diode capacitance
VF
CD
VR=20V
VR=30V
VR=40V
B5817WS
B5818WS
B5819WS
VR=4V,f=1MHz
MIN MAX UNIT
B5817WS
B5818WS
B5819WS
B5817WS
B5818WS
B5819WS
IF=1A
IF=3A
IF=1A
IF=3A
IF=1A
IF=3A
20
30
40
V
1 mA
0.45
0.75
0.55
0.875
0.6
0.9
120
V
pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
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