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Galaxy Semi-Conductor |
BL Galaxy Electrical
Production specification
Schottky Barrier Diode
FEATURES
z Extremely low VF.
z Low stored change,majority carrier
conduction.
z Low power loss/high efficient
Pb
Lead-free
B5817W-B5819W
APPLICATIONS
z For Use In Low Voltage, High Frequency Inverters.
z Free Wheeling, And Polarity Protection Applications.
ORDERING INFORMATION
Type No.
Marking
B5817W
B5818W
B5819W
SJ
SK
SL
SOD-123
Package Code
SOD-123
SOD-123
SOD-123
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
symbol B5817W
Non-Repetitive Peak reverse voltage
VRSM
24
B5818W
36
B5819W Unit
48 V
Peak repetitive Peak reverse voltage
VRRM
Working Peak Reverse voltage
VRWM
20
30
40 V
DC Reverse Voltage
VR
RMS Reverse Voltage
Average Rectified output Current
Peak forward surge current@=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Storage temperature
VR(RMS)
Io
IFSM
Pd
RθJA
TJ,TSTG
14
1
25
250
80
-65~+125
21
28 V
A
A
mW
℃/W
℃
Document number: BL/SSSKA006
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Schottky Barrier Diode
B5817W-B5819W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Symbol Test Condition
IR=1mA
V(BR)
Reverse voltage leakage current IR
Forward voltage
Diode capacitance
VF
CD
VR=20V
VR=30V
VR=40V
B5817W
B5818W
B5819W
VR=4V,f=1MHz
B5817W
B5818W
B5819W
B5817W
B5818W
B5819W
IF=1A
IF=3A
IF=1A
IF=3A
IF=1A
IF=3A
MIN
20
30
40
MAX UNIT
V
1 mA
0.45
0.75
0.55
0.875
0.6
0.9
120
V
pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSKA006
Rev.A
www.galaxycn.com
2
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