파트넘버.co.kr 1SS181 데이터시트 PDF


1SS181 반도체 회로 부품 판매점

Ultra High Speed Switching Diode



WILLAS 로고
WILLAS
1SS181 데이터시트, 핀배열, 회로
WILLAS
SCS501V
VOLTAGE 40V
0.1AMP Schottky Barrier Rectifiers
Ultra High Speed Switching
Application Pb Free Product
FEATURES
1SS181
SOD-323(SC-76)
* ExtremelyzLoLwoVwFforward voltage : VF (3) = 0.92V (typ.)
* ExtremelyzthFinapsatcrkeavgeerse recovery time : trr = 1.6ns (typ.)
.012 (0.3)
Cathode Band
* Low storezd cShamrgaell total capacitance : CT = 2.2pF (typ.)
* Majority czarrWierecodnedcuclatioren that the material of product
compliance with RoHS requirements.
MECHANICAL DATA
* Case:Molded plastic, JEDEC SOD-323(SC-76)
Driver Marking
* Terminal : Solder plated, solderable per MIL-STD-750,
1SSM18e1th=odA23026
.059 (1.5)
.043 (1.1) 3
ANODE
Top View
SOT –23
Dimensions in inches
and (millimeters)
CATHODE
1
2
CATHODE
* PoMlaraityx:iImndiucamtedRbyactaitnhogdesb(aTndA = 25°C)
* Mounting PoCsihtiaorna:cAtenryistic
* WeigMhta:x0im.0u0m01(5p9eoaukn) cree,v0e.r0s0e4v5ogltraagme
Reverse voltage
Maximum (peak) forward current
Symbol
VRM
VR
IFM
Rating
85
80
300 *
Unit
V
MaVrking Code: JV or 4
mA
.010 (0.25)
min.
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM 2 *
A
Power dissipation
P 150 mW
MAJXunIcMtionUtemMperaRturAe TING AND ETj LECTRI1C25 AL CHA°CRACTERISTICS
Storage temperature range
Tstg -55~+125 °C
Rating 25oC ambient temperature unless otherwise specified.
Sing*le: Uphniat sraetihnga.lfTowtaalvrea,tin6g0H= zU,nriet sraistitnigve× o1f.5i.nductive load.
For capacitive load, derate current by 20%
Electrical Characteristics (TA = 25°C)
CharacPtearriasmticeter
Symbol
Repetitive Peak Reverse Voltage
Test
Circuit
Conditions
Test Condition
Continuous Reverse Voltage
Forward voltage
Forward Voltage
Reverse current
Reverse Current
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
I F = 10mA DC
I F = 100mA DC
VR = 10V DC
IF = 1mA
IF = 10mA
IF = 100mA
VR = 30V
VR = 80V
Mean RToetcatlifcyainpgaCciutarrnecnet
CT – VR = 0, f = 1MHz
Peak fRorewvaerrdsesurregceocvuerrryentitme
trr
– IF = 10mA (Fig.5)
Min
TypS.ymbolMaMx in.
VRM
0.61
0.74
VR
0.90 VF1 1.20
VF2 0.1
IR 0.5
2.2 IO 4.0
1.6 IFSM 4.0
UTnyipt .
V
µA
p0F.1
n1s
Max.
45
40
0.34
0.55
30
Unit
V
V
V
V
µA
A
A
Capacitance between terminals
CT 6.0
pF
Operating Temperature
Storage Temperature
TJ
TSTG
125
-40 +125
oC
oC


1SS181 데이터시트, 핀배열, 회로
WILLAS
Electrical characteristic curves
1SS181
25
-25
0 0.2 0.4 0.6 0.8 1.0 1.2
Fig.1 FORWARD VOLTAGE VF(V)
10
Ta=100
1
75
100n
50
25
10n
1n
0
20 40 60
80
Fig.2 REVERSE VOLTAGE VR(V)
2.5
f=1MHz
Ta=25
2.0
1.5
1.0
0.5
0
0.3
1 3 10 30 100
Fig.3 REVERSE VOLTAGE VR(V)
100
Ta=25
50 Fig.5
30
10
5
3
1
0.5
0.1 0.3
1
3 10
30
Fig.4 FORWARD CURRENT IF(mA)
0 INPUT
-6V
50ns
PULSE GENERATOR
(ROUT=50 )
0.01 F DUT
E
OUTPUT
OSCILLOSCOPE
(RIN=50 )
IF=10mA
0
IR
OUTPUT WAVEFORM
0.1IR
trr
Fig.5 Reverse recovery time (trr) test circuit




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1SS181 diode

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