파트넘버.co.kr RB420DFH 데이터시트 PDF


RB420DFH 반도체 회로 부품 판매점

Schottky Barrier Diode



ROHM Semiconductor 로고
ROHM Semiconductor
RB420DFH 데이터시트, 핀배열, 회로
Data Sheet
Shottky barrier diode
RB420DFH
Applications
Low current rectification
Dimensions (Unit : mm)
AEC-Q101 Qualified
Land size figure (Unit : mm)
1.9
Features
1) Small mold type. (SMD3)
2) Low IR
3) High reliability.
Construction
Silicon epitaxial planar
2.9± 0.2
各リードとも
0.4 +-00..105 Eachlead has same dimension
(3)
+0.1
0.15-0.06
0.95
(2)
0.95
0.95
1.9± 0.2
(1)
0~ 0.1
0 . 8± 0 . 1
11..11±0000....21021
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
Taping specifications(Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
      0
0.8MIN.
SMD3
Structure
0.3±0.1
3.2±0.1
4.0±0.1
Absolute maximum ratings(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward voltage (*1)
Forward current surge peak (60Hz1cyc) (*1)
Junction temperature
Storage temperature
(*1) Rating of per diode
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Limits
40
40
100
1
125
40 to 125
φ1.05MIN
Unit
V
V
mA
A
°C
°C
1.35±0.1
Electrical characteristics(Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
VF1 - - 0.45
IR1 - - 1
Ct1 - 6 -
Unit Conditions
V IF=10mA
μA VR=10V
pF VR=10V , f=1MHz
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.03 - Rev.D


RB420DFH 데이터시트, 핀배열, 회로
RB420DFH
Data Sheet
100
Ta=75℃
10
Ta=125℃
1
Ta=25℃
Ta=-25℃
0.1
0.01
0
100 200 300 400 500 600 700 800
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
100
10
1
0.1
0.01
0.001
0
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
30
400 500
Ta=25Ta=25℃
Ta=25℃
390
IF=10mnI=FA3=01pAcs
n=10pcs
400
VR=10V
n=30pcs
380 300
370 200
360
350
AAVVEE:4:3257.20m.V9mV
σ:1.6771mV
100
AVE:98.96nA
0
VF DISPERSION MAP
IR DISPERSION MAP
100
f=1MHz
10
1
0 10 20 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
Ta=25℃
25 f=1MHz
VR=10V
20 n=10pcs
15
10
5
AVE:5.81pF
0
Ct DISPERSION MAP
20
Ifsm 1cyc
15
8.3ms
10
5
AVE:5.5A
0
IFSM DISRESION MAP
1000
Rth(j-a)
100
Rth(j-c)
Mounted on epoxy board
IM=1mA
IF=10mA
10
1ms time
300us
1
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
15
Ifsm
10 8.3ms 8.3ms
1cyc
5
0
0.1 1 10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
0.1
0.08
D=1/2
0.06 Sin(θ=180)
0.04
DC
0.02
0
0 0.05 0.1 0.15
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
0.2
15
Ifsm
t
10
5
0
0.1
0.003
1 10 100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.002
0.001
DC
Sin(θ=180)
D=1/2
0
0 10 20 30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.03 - Rev.D




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RB420DFH diode

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RB420DFH

Schottky Barrier Diode - ROHM Semiconductor