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ROHM Semiconductor |
Data Sheet
Shottky barrier diode
RB420DFH
Applications
Low current rectification
Dimensions (Unit : mm)
AEC-Q101 Qualified
Land size figure (Unit : mm)
1.9
Features
1) Small mold type. (SMD3)
2) Low IR
3) High reliability.
Construction
Silicon epitaxial planar
2.9± 0.2
各リードとも
0.4 +-00..105 Each同le寸a法d has same dimension
(3)
+0.1
0.15-0.06
0.95
(2)
0.95
0.95
1.9± 0.2
(1)
0~ 0.1
0 . 8± 0 . 1
11..11±0000....21021
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
Taping specifications(Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
0
0.8MIN.
SMD3
Structure
0.3±0.1
3.2±0.1
4.0±0.1
Absolute maximum ratings(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward voltage (*1)
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
Storage temperature
(*1) Rating of per diode
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Limits
40
40
100
1
125
40 to 125
φ1.05MIN
Unit
V
V
mA
A
°C
°C
1.35±0.1
Electrical characteristics(Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
VF1 - - 0.45
IR1 - - 1
Ct1 - 6 -
Unit Conditions
V IF=10mA
μA VR=10V
pF VR=10V , f=1MHz
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.03 - Rev.D
RB420DFH
Data Sheet
100
Ta=75℃
10
Ta=125℃
1
Ta=25℃
Ta=-25℃
0.1
0.01
0
100 200 300 400 500 600 700 800
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
100
10
1
0.1
0.01
0.001
0
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
30
400 500
Ta=25T℃a=25℃
Ta=25℃
390
IF=10mnI=FA3=01pAcs
n=10pcs
400
VR=10V
n=30pcs
380 300
370 200
360
350
AAVVEE:4:3257.20m.V9mV
σ:1.6771mV
100
AVE:98.96nA
0
VF DISPERSION MAP
IR DISPERSION MAP
100
f=1MHz
10
1
0 10 20 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
Ta=25℃
25 f=1MHz
VR=10V
20 n=10pcs
15
10
5
AVE:5.81pF
0
Ct DISPERSION MAP
20
Ifsm 1cyc
15
8.3ms
10
5
AVE:5.5A
0
IFSM DISRESION MAP
1000
Rth(j-a)
100
Rth(j-c)
Mounted on epoxy board
IM=1mA
IF=10mA
10
1ms time
300us
1
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
15
Ifsm
10 8.3ms 8.3ms
1cyc
5
0
0.1 1 10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
0.1
0.08
D=1/2
0.06 Sin(θ=180)
0.04
DC
0.02
0
0 0.05 0.1 0.15
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
0.2
15
Ifsm
t
10
5
0
0.1
0.003
1 10 100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.002
0.001
DC
Sin(θ=180)
D=1/2
0
0 10 20 30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.03 - Rev.D
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