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FE3B 반도체 회로 부품 판매점

Ultra Fast Sinterglass Diode



Vishay 로고
Vishay
FE3B 데이터시트, 핀배열, 회로
VISHAY
Ultra Fast Sinterglass Diode
\
Features
• High temperature metallurgically bonded con-
struction
• Cavity-free glass passivated junction
• Superfast recovery time for high efficiency
• Low forward voltage, high current capability
• Hermetically sealed package
• Low leakage current
• High surge current capability
FE3A to FE3D
Vishay Semiconductors
17133
Mechanical Data
Case: Sintered glass case, G4
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Parts Table
Part
FE3A
FE3B
FE3C
FE3D
VRRM = 50 V
VRRM = 100 V
VRRM = 150 V
VRRM = 200 V
Type differentiation
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 1040 mg
Package
G4
G4
G4
G4
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive peak reverse
voltage
Test condition
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
Maximum average forward rectified current
Peak forward surge current
Operating junction and storage temperature
range
0.375 " (9.5 mm) lead length at Tamb = 75 °C
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method)
Part
FE3A
FE3B
FE3C
FE3D
Symbol
VR =
VRRM
VR =
VRRM
VR =
VRRM
VR =
VRRM
IF(AV)
IFSM
Value
50
100
150
200
3.0
125
TJ, - 55 to +
TSTG
175
Unit
V
V
V
V
A
A
°C
Document Number 86070
Rev. 2, 28-Jan-03
www.vishay.com
1


FE3B 데이터시트, 핀배열, 회로
FE3A to FE3D
Vishay Semiconductors
VISHAY
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Typical thermal resistance 1), 2)
RθJA 55 K/W
RθJL 20 K/W
1) Thermal resistance from junction to ambient and/or lead, 0.375 " (9.5 mm) lead length mounted on P.C.B. with 0.5 x 0.5 (12 x 12 mm)
copper pads.
2) Thermal resistance from junction to lead at 0.375 " (9.5 mm) lead length with both leads attached to heatsinks
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Maximum instantaneous forward IF = 3.0 A
voltage
Maximum reverse current
VR = VRRM, Tamb = 25 °C
VR = VRRM, Tamb = 100 °C
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Typical junction capacitance
VR = 4 V, f = 1 MHz
Symbol
VF
IR
IR
trr
CJ
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Typ. Max Unit
0.95 V
5.0
50
35
100
µA
µA
ns
pF
3.0
Resistive or Inductive Load
0.375" (9.5mm) Lead Length
2.5
2.0
1.5
1.0
0.5
0
0 25 50 75 100 125 150 175
gfe3a_01
Ambient Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
150
TJ = TJ max.
8.3ms Single Half Sine-W ave
125 (JEDEC Method)
100
75
50
25
0
1 10 100
gfe3a_02
Number of Cycles at 60 HZ
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 86070
Rev. 2, 28-Jan-03




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