PDF BAV99S Data sheet ( Hoja de datos )

Número de pieza	BAV99S
Descripción	250mW High Speed Switching Array
Fabricantes	Taiwan Semiconductor
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No Preview Available ! Small Signal Product BAV99S Taiwan Semiconductor 250mW High Speed Switching Array FEATURES - Fast switching speed - High reverse breakdown voltage rating - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) MECHANICAL DATA - Case: SOT-363 small outline plastic package - Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Case material UL flammability rating 94V-0 - Weight: 8 ± 0.5 mg - Marking Code: K1 SOT-363 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation PD 200 Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Mean Forward Current Non-Repetitive Peak Forward Surge Current Pulse width = 1 μs Pulse width = 1 s VRRM IFRM IO IFSM 85 450 150 4.5 0.5 Junction and Storage Temperature Range TJ , TSTG -55 to 150 PARAMETER Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current Junction Capacitance Reverse Recovery Time IR=2.5μA IF=1.0mA IF=10mA IF=50mA IF=100mA IF=150mA @VR=75V VR=0, f=1.0MHz (Note 1) Note 1 : Reverse recovery test conditions : IF=IR=10mA, RL=100Ω SYMBOL V(BR) VF IR CJ trr MIN 75 - - - - - - - - MAX - 0.715 0.855 1.000 1.200 1.250 1.000 1.500 6.000 UNIT mW V mA mA A oC UNIT V V μA pF ns Document Number: DS_S1501006 Version: G15 1 page

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