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PDF R1EX24512BTAS0A Data sheet ( Hoja de datos )
| Número de pieza | R1EX24512BTAS0A | |
| Descripción | 512k EEPROM | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de R1EX24512BTAS0A (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
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R1EX24512BSAS0A
R1EX24512BTAS0A
Two-wire serial interface
512k EEPROM (64-kword × 8-bit)
Preliminary Datasheet
R10DS0025EJ0001
Rev.0.01
Sep, 01, 2010
Description
R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They
realize high speed, low power consumption and a high level of reliability by employing advanced MONOS memory
technology and CMOS process and low voltage circuitry technology. They also have a 128-byte page programming
function to make their write operation faster.
Note: Renesas Electronics’ serial EEPROM are authorized for using consumer applications such as cellular phone,
camcorders, audio equipment. Therefore, please contact Renesas Electronics’ sales office before using
industrial applications such as automotive systems, embedded controllers, and meters.
Features
• Single supply: 1.8 V to 5.5 V
• Two-wire serial interface (I2C serial bus)
• Clock frequency: 1 MHz (2.5 V to 5.5 V) / 400 kHz (1.8 V to 5.5 V)
• Power dissipation:
Standby: 2 µA (max)
Active (Read): 1 mA (max)
Active (Write): 5 mA (max)
• Automatic page write: 128-byte/page
• Write cycle time: 5 ms
• Endurance: 1,000k Cycles @25°C
• Data retention: 100 Years @25°C
• Small size packages: SOP-8pin , TSSOP 8-pin
• Shipping tape and reel
SOP 8-pin: 2,500 IC/reel
TSSOP 8-pin: 3,000 IC/reel
• Temperature range: −40 to +85°C
• Lead free products.
Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest
Renesas Electronics’ Sales Dept. regarding specifications.
R10DS0025EJ0001 Rev.0.01
Sep, 01, 2010
Page 1 of 17
1 page  
R1EX24512BSAS0A/R1EX24512BTAS0A
Timing Waveforms
Bus Timing
SCL
SDA
(in)
tF
tSU.STA
tHD.STA
tAA
1/fSCL
tHIGH
tLOW
tHD.DAT
tSU.DAT
tDH
SDA
(out)
tSU.WP
WP
tR
tSU.STO
tBUF
tHD.WP
Write Cycle Timing
Stop condition
Start condition
SCL
SDA
D0 in
Write data
(Address (n))
ACK
tWC
(Internally controlled)
R10DS0025EJ0001 Rev.0.01
Sep, 01, 2010
Page 5 of 17
5 Page 
R1EX24512BSAS0A/R1EX24512BTAS0A
Write Operations(WP=High)
Byte Write: (Write operation during WP=High status)
A write operation requires an 8-bit device address word with R/W = “0”. Then the EEPROM sends acknowledgment
"0" at the ninth clock cycle. After these, the 512kbit EEPROM receives 2 sequence 8-bit memory address words.
Upon receipt of this memory address, the EEPROM outputs acknowledgment "0". After receipt of 8-bit write data, the
EEPROM outputs acknowledgment "1"(NO ACK). Then the EEPROM write operations are not allowed.
Byte Write Operation
WP
Device
address
512k 1 0 1 0
Start
1st Memory
address (n)
W
ACK
R/W
2nd Memory
address (n)
No ACK
Write data (n)
ACK
ACK
Stop
Page Write:
The page write is the same sequence as the byte write. The page write is initiated by a start condition, device address
word and memory address(n) with every ninth bit acknowledgment"0". But after inputting write data(Dn) , the
EEPROM outputs acknowledgment "1"(NO ACK). Then the EEPROM write operations are not allowed.
Page Write Operation
WP
512k
Start
Device
address
1010
1st Memory
address (n)
W
ACK
R/W
2nd Memory
address (n)
No ACK
No ACK
Write data (n) Write data (n+m)
ACK
ACK
Stop
R10DS0025EJ0001 Rev.0.01
Sep, 01, 2010
Page 11 of 17
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet R1EX24512BTAS0A.PDF ] | |
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