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Fairchild Semiconductor |
August 2014
FSBB30CH60D
Motion SPM® 3 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 30 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Very Low Thermal Resistance Using Al2O3 DBC
Substrate
• Built-In Bootstrap Diodes and Dedicated Vs Pins
Simplify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• LVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Isolation Rating: 2500 Vrms / 1 min.
General Description
FSBB30CH60D is an advanced Motion SPM® 3 module
providing a fully-featured, high-performance inverter
output stage for AC Induction, BLDC, and PMSM
motors. These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while also
providing multiple on-module protection features includ-
ing under-voltage lockouts, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's internal IGBTs.
Separate negative IGBT terminals are available for each
phase to support the widest variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9085 - Motion SPM® 3 Ver.5 Series Users Guide
• AN-9086 - SPM 3 Package Mounting Guide
• AN-9087 - Motion SPM® 3 Ver.5 Series Thermal
Performance Information
Figure 1. Package Overview
Package Marking and Ordering Information
Device
FSBB30CH60D
Device Marking
FSBB30CH60D
Package
SPMPA-027
Packing Type
Rail
Quantity
10
©2014 Fairchild Semiconductor Corporation
FSBB30CH60D Rev. C0
1
www.fairchildsemi.com
Integrated Power Functions
• 600 V - 30 A IGBT inverter for three-phase DC / AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out Protection (UVLO)
Note: Available bootstrap circuit example is given in Figures 5 and 15.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out Protection (UVLO)
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
©2014 Fairchild Semiconductor Corporation
FSBB30CH60D Rev. C0
2
www.fairchildsemi.com
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