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RFCM2680 반도체 회로 부품 판매점

POWER DOUBLER MODULE



RF Micro Devices 로고
RF Micro Devices
RFCM2680 데이터시트, 핀배열, 회로
RFCM2680
45MHz to
1003MHz
GaAs/GaN
Power Dou-
bler MODULE
RFCM2680
45MHz TO 1003MHz GaAs/GaN
POWER DOUBLER MODULE
Package: 9-pin, 9.0mm x 8.0mm x 1.375mm
Features
Excellent Linearity
Superior Return Loss
Performance
Extremely Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under all
Terminations
Extremely High Output Capability
22.5dB Min. Gain at 1003MHz
450mA Max. at 24VDC
Applications
45MHz to 1003MHz CATV
Amplifier Systems
INPUT
Current Setting V+
RFCM2680
OUTPUT
Functional Block Diagram
Product Description
The RFCM2680 is a Power Doubler amplifier SMD Module. The part employs GaAs
pHEMT die and GaN HEMT die, has high output capability, and is operated from
45MHz to 1003MHz. It provides excellent linearity and superior return loss perfor-
mance with low noise and optimal reliability.
DC current of the device can be externally adjusted for optimum distortion perfor-
mance versus power consumption over a wide range of output level.
Ordering Information
RFCM2680SB
Sample bag with 5 pieces
RFCM2680SR
7” Reel with 100 pieces
RFCM2680TR7
7” Reel with 500 pieces
RFCM2680TR13
13” Reel with 1000 pieces
RFCM2680PCBA-410 Fully Assembled Evaluation Board
DS120518
GaAs HBT
Optimum Technology Matching® Applied
SiGe BiCMOS
 GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
BiFET HBT
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RFCM2680 데이터시트, 핀배열, 회로
RFCM2680
Absolute Maximum Ratings
Parameter
RF Input Voltage (single tone; on
evaluation board)
DC Supply Over-Voltage (5 minutes)
Storage Temperature
Operating Mounting Base Temperature
l
Rating
60
30
-40 to +100
-30 to +100
Unit
dBmV
V
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Overall
Power Gain
21.0
21.5
22.0
V+ = 24V; TMB = 30°C; ZS = ZL = 75;
IDC = IDC Typical
dB f = 45MHz
22.5
23.0
24.0
dB f = 1003MHz
Slope[1]
1.0 1.5 2.5 dB f = 45MHz to 1003MHz
Flatness of Frequency Response
1 dB f = 45MHz to 1003MHz (Peak to Valley)
Input Return Loss
20
dB f = 45MHz to 320MHz
19 dB f = 320MHz to 640MHz
18 dB f = 640MHz to 870MHz
16 dB f = 870MHz to 1003MHz
Output Return Loss
20
dB f = 45MHz to 320MHz
19 dB f = 320MHz to 640MHz
18 dB f = 640MHz to 870MHz
17 dB f = 870MHz to 1003MHz
Noise Figure
3.0 4.0 dB f = 50MHz to 1003MHz
Output P1dB
32 dBm
Output IP3
49 dBm 6MHz tone spacing at 16dBm/tone
Total Current Consumption (DC)
430.0
450.0
mA
Distortion data 40MHz to
550MHz
V+ = 24V; TMB = 30°C; ZS = ZL = 75;
IDC = IDC typical
CTB
XMOD
CSO
-73 -69 dBc VO = 60dBmV at 1003MHz, 18dB extrapolated
-66 -61 dBc tilt, 79 analog channels plus 75 digital chan-
-75 -65 dBc nels (-6dB offset)[2][4]
CIN
Distortion data 40MHz to
550MHz
55
58
dB
V+ = 24V; TMB = 30°C; ZS = ZL = 75;
IDC = 370mA
CTB
XMOD
CSO
-73 dBc VO = 57dBmV at 1003MHz, 18dB extrapolated
-67 dBc tilt, 79 analog channels plus 75 digital chan-
-76 dBc nels (-6dB offset)[3][4]
CIN 59 dB
[1] The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
[2] 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +42dBmV to +51.4dBmV tilted output level, plus 75 digital
channels, -6dB offset relative to the equivalent analog carrier.
[3] 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +39dBmV to +48.4dBmV tilted output level, plus 75 digital
channels, -6dB offset relative to the equivalent analog carrier.
[4] Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat
(CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective
voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is
defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120518




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RFCM2680

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