|
Renesas |
Target Specifications Datasheet
RJF0605DPD
Silicon N Channel MOS FET Series
Power Switching
R07DS0714EJ0100
Rev.1.00
Apr 17, 2012
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (4 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Power supply voltage applies 12 V and 24 V.
For Industrial applications
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
1
2
3
G
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
D
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Gate to source voltage
Drain current
VGSS
ID Note3
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP Note 2
EAR Note 2
Pch Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg 50
3. It provides by the current limitation lower bound value.
Ratings
60
16
–2.5
20
20
6.7
192
40
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
C
C
R07DS0714EJ0100 Rev.1.00
Apr 17, 2012
Page 1 of 7
RJF0605DPD
Target Specifications
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Note: 4. Pulse test
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
Vop
ID limt
Min
3.5
—
—
—
—
—
—
—
3.5
20
Typ
—
—
—
—
—
0.8
0.35
175
—
—
Max
—
1.2
100
50
1
—
—
—
12
—
Unit
V
V
A
A
A
mA
mA
C
V
A
(Ta = 25°C)
Test Conditions
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Vi = 1.2 V, VDS = 0
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Channel temperature
VGS = 5 V, VDS = 10 V Note 4
Electrical Characteristics
Item
Symbol Min Typ Max Unit
Drain current
ID1 — — 35 A
ID2 — — 10 mA
ID3 20 — — A
Drain to source breakdown
V(BR)DSS
60
—
—
V
voltage
Gate to source breakdown
voltage
Gate to source leak current
V(BR)GSS
16
—
—
V
V(BR)GSS
–2.5
—
—
V
IGSS1
—
— 100 A
IGSS2
—
—
50 A
IGSS3
—
—
1 A
IGSS4
—
—
–100
A
Input current (shut down)
IGS(OP)1
—
0.8
— mA
IGS(OP)2
—
0.35
—
mA
Zero gate voltage drain current
IDSS
—
—
10 A
Gate to source cutoff voltage
VGS(off)
1.1
—
2.1
V
Forward transfer admittance
|yfs| 12 21 — S
Static drain to source on state
RDS(on)
—
34
50 m
resistance
RDS(on)
—
24
38 m
Output capacitance
Coss
—
450
—
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
—
3
— s
tr — 10 — s
td(off) — 4.4 — s
tf — 7.7 — s
Body-drain diode forward
voltage
VDF — 0.9 — V
Body-drain diode reverse
recovery time
trr
— 85.3 —
ns
Over load shut down
operation time Note 6
tos1 — 0.3 — ms
tos2 — 0.2 — ms
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
VGS = 3.5 V, VDS = 10 V Note 5
VGS = 1.2 V, VDS = 10 V
VGS = 5 V, VDS = 10 V Note 5
ID = 10 mA, VGS = 0
IG = 800 A, VDS = 0
IG = –100 A, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 32 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 10 A, VDS = 10 V Note 5
ID = 10 A, VGS = 4 V Note 5
ID = 10 A, VGS = 10 V Note 5
VDS = 10 V, VGS = 0, f = 1MHz
VGS = 10 V, ID= 10 A, RL = 3
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0
diF/dt = 50 A/s
VGS = 5 V, VDD = 16 V
VGS = 5 V, VDD = 24 V
R07DS0714EJ0100 Rev.1.00
Apr 17, 2012
Page 2 of 7
|