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VS-111MT120KPBF 반도체 회로 부품 판매점

Three Phase Controlled Bridge



Vishay 로고
Vishay
VS-111MT120KPBF 데이터시트, 핀배열, 회로
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
Three Phase Controlled Bridge (Power Modules),
55 A to 110 A
MT-K
PRODUCT SUMMARY
IO
VRRM
Package
Circuit
55 A to 110 A
800 V to 1600 V
MT-K
Three phase bridge
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio
• 4000 VRMS isolating voltage
• UL E78996 approved
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose and
heavy duty applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
5.MT...K
IO
IFSM
TC
50 Hz
60 Hz
55
85
390
410
50 Hz
I2t
60 Hz
I2t
770
700
7700
VRRM
TStg
TJ
Range
Range
Range
VALUES
9.MT...K
90
85
950
1000
4525
4130
45 250
800 to 1600
-40 to 125
-40 to 125
VALUES
11.MT...K
110
85
1130
1180
6380
5830
63 800
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VS-5.MT...K
VS-9.MT...K
VS-11.MT...K
80
100
120
140
160
80
100
120
140
160
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
800
1000
1200
1400
1600
800
1000
1200
1400
1600
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
1100
1300
1500
1700
900
1100
1300
1500
1700
VDRM, MAXIMUM
REPETITIVE PEAK
OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
800
1000
1200
1400
1600
800
1000
1200
1400
1600
UNITS
A
°C
A
A2s
A2s
V
°C
°C
IRRM/IDRM,
MAXIMUM
AT TJ = 125 °C
mA
10
20
Revision: 27-Feb-14
1 Document Number: 94353
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


VS-111MT120KPBF 데이터시트, 핀배열, 회로
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum DC output current at
case temperature
IO
Maximum peak, one-cycle
forward, non-repetitive on state
surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold
voltage
High level value of threshold
voltage
Low level value on-state slope
resistance
High level value on-state slope
resistance
Maximum on-state voltage drop
Maximum non-repetitve
rate of rise of turned on current
Maximum holding current
Maximum latching current
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
dI/dt
IH
IL
TEST CONDITIONS
120° rect. conduction angle
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Initial TJ = TJ max.
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
(I > x IT(AV)), TJ maximum
VALUES
5.MT...K
55
85
390
410
330
345
770
700
540
500
7700
VALUES
9.MT...K
90
85
950
1000
800
840
4525
4130
3200
2920
45 250
VALUES
11.MT...K
110
85
1130
1180
950
1000
6380
5830
4510
4120
63 800
UNITS
A
°C
A
A2s
A2s
1.17 1.09
1.45 1.27
1.04
1.27
V
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
12.40
(I > x IT(AV)), TJ maximum
Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction
TJ = 25 °C, from 0.67 VDRM, ITM = x IT(AV),
Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
TJ = 25 °C, anode supply = 6 V, resistive load,
gate open circuit
TJ = 25 °C, anode supply = 6 V, resistive load
11.04
2.68
4.10
3.59
1.65
150
200
400
3.93
m
3.37
1.57 V
A/μs
mA
BLOCKING
PARAMETER
SYMBOL
RMS isolation voltage
Maximum critical rate of rise of
off-state voltage
VISOL
dV/dt (1)
TEST CONDITIONS
TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s
TJ = TJ maximum, linear to 0.67 VDRM,
gate open circuit
5.MT...K
Note
(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90
9.MT...K
4000
500
11.MT...K UNITS
V
V/μs
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
PGM
PG(AV)
IGM
- VGT
Maximum required DC gate
voltage to trigger
VGT
Maximum required DC gate
current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
IGT
VGD
IGD
TEST CONDITIONS
TJ = TJ maximum
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
Anode supply = 6 V,
resistive load
TJ = TJ maximum, rated VDRM applied
5.MT...K
9.MT...K
10
2.5
2.5
11.MT...K UNITS
W
A
10
4.0 V
2.5
1.7
270
150 mA
80
0.25 V
6 mA
Revision: 27-Feb-14
2 Document Number: 94353
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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Three Phase Controlled Bridge - Vishay