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PDF RF7222 Data sheet ( Hoja de datos )
| Número de pieza | RF7222 | |
| Descripción | 3V W-CDMA BAND 2 LINEAR PA MODULE | |
| Fabricantes | RF Micro Devices | |
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RF7222
3V W-CDMA BAND 2 LINEAR PA MODULE
Package Style: Module, 10-Pin, 3mmx3mmx1.0mm
Features
HSDPA and HSPA+ Compliant
Low Voltage Positive Bias
Supply (3.0V to 4.35V)
+28.5dBm Linear Output
Power (+27.0dBm HSDPA
and HSPA+)
High Efficiency Operation
39% at POUT=+28.5dBm
19% at POUT=+19.0dBm
(Without DC/DC Converter)
Low Quiescent Current in Low
Power Mode: 17mA
Internal Voltage Regulator
Eliminates Need for External
Reference Voltage (VREF)
3-Mode Power States with
Digital Control Interface
Integrated Power Coupler
Integrated Blocking and Col-
lector Decoupling Capacitors
Applications
WCDMA/HSDPA/HSUPA
Wireless Handsets and Data
Cards
Dual-Mode UMTS Wireless
Handsets
VBAT 1
RF IN 2
VMODE1 3
VMODE0 4
VEN 5
Bias Control &
PA/VMODE Enable
10 VCC
9 RF OUT
8 CPL IN
7 GND
6 CPL OUT
Functional Block Diagram
Product Description
The RF7222 is a high-power, high-efficiency, linear power amplifier
designed for use as the final RF amplifier in 3V, 50 W-CDMA mobile cel-
lular equipment and spread-spectrum systems. This PA is developed for
UMTS Band 2 which operates in the 1850MHz to 1910MHz frequency
band. The RF7222 has two digital control pins, providing the option of one
of three power modes to optimize performance and current drain at lower
power levels. The part also has an integrated directional coupler which
eliminates the need for an external discrete coupler at the output. The
RF7222 is fully HSDPA and HSPA+ compliant and is assembled in a 10-
pin, 3mmx3mm module.
Ordering Information
RF7222
3V W-CDMA Band 2 Linear PA Module
RF7222PCBA-410 Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Prelim DS110228
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 7
1 page  
RF7222
Preliminary Application Schematic
VBAT
C5
4.7uF
C72
10nF
J1
RF IN
1
2
10
9
J2
RF OUT
C82
10nF
VMODE1
C92
10nF
VMODE0
C102
10nF
VEN
3
Bias Control &
4 PA/VMODE Enable
5
C112
10nF
8
R23
7 50
6
J3
CPL OUT
VCC
C6
4.7uF
C4
22uF
Notes:
1. Place these capacitors as close to PA as possible.
2. 50 resistor will be removed if pin 8 is connected to another coupler. Coupler Directivity can be improved with R2 = 33
Prelim DS110228
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RF7222.PDF ] | |
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