파트넘버.co.kr F25D64QA 데이터시트 PDF


F25D64QA 반도체 회로 부품 판매점

64 Mbit Serial Flash Memory



Elite Semiconductor 로고
Elite Semiconductor
F25D64QA 데이터시트, 핀배열, 회로
ESMT
Flash
FEATURES
Single supply voltage 1.65~2V
Speed
- Fast Read for SPI mode
- Read max frequency: 33MHz
- Fast Read max frequency: 104MHz
- Fast Read Dual/Quad max frequency: 84MHz/104MHz
(168MHz equivalent Dual SPI;
416MHz equivalent Quad SPI)
- Fast Read for QPI mode
- Fast Read max frequency: 84MHz
- Fast Read Quad max frequency: 104MHz
(416MHz equivalent Quad QPI)
- 8/ 16/ 32/ 64 byte Wrap-Around Burst Read Mode
Low power consumption
- Active current: 15mA (typ.)
- Standby current: 50 μ A (typ.)
- Deep Power Down current: 5 μ A (typ.)
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
Program
- Page programming time: 1.2 ms (typical)
Page Programming
- 256 byte per programmable page
F25D64QA
64 Mbit Serial Flash Memory
with Dual and Quad
Program/Erase Suspend
Erase
- Chip Erase time 38 sec (typical)
- 64K bytes Block Erase time 0.5 sec (typical)
- 32K bytes Block Erase time 250 ms (typical)
- 4K bytes Sector Erase time 60 ms (typical)
Status and Security Register Feature
Command Reset
Advanced Security Features
- Flexible Block Protection (BP0-BP3)
Lockable 512 bytes OTP security sector
SPI Serial Interface
- SPI Compatible: Mode 0 and Mode 3
Support Serial Flash Discoverable Parameters (SFDP) mode
Write Protect ( WP )
Hold Pin ( HOLD )
All Pb-free products are RoHS-Compliant
ORDERING INFORMATION
Product ID
F25D64QA –104PAIG
Speed
104MHz
F25D64QA –104VAIG
104MHz
F25D64QA –104HIG
104MHz
Package
8-lead
SOIC
8-lead
VSOP
8-contact
WSON
200 mil
208mil
6x5 mm
Comments
Pb-free
Pb-free
Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date: Aug. 2013
Revision: 1.1
1/63


F25D64QA 데이터시트, 핀배열, 회로
ESMT
F25D64QA
GENERAL DESCRIPTION
The F25D64QA is a 64 Megabit, 1.8V only CMOS Serial Flash
memory device. The device supports the standard Serial
Peripheral Interface (SPI), a Dual/Quad SPI and QPI. ESMT’s
memory devices reliably store memory data even after 100,000
programming and erase cycles.
The memory array can be organized into 32,768 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction.
The device features sector erase architecture. The memory array
is divided into 2,048 uniform sectors with 4K byte each; 256
uniform blocks with 32K byte each; 128 uniform blocks with 64K
byte each. Sectors can be erased individually without affecting
the data in other sectors. Blocks can be erased individually
without affecting the data in other blocks. Whole chip erase
capabilities provide the flexibility to revise the data in the device.
The device has Sector, Block or Chip Erase but no page erase.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
FUNCTIONAL BLOCK DIAGRAM
Page Address
Latch / Counter
High Voltage
Generator
Status
Register
Byte Address
Latch / Counter
Memory
Array
Page Buffer
Y-Decoder
Command and Conrol Logic
Serial Interface
CE SCK
SI
SO WP HOLD
(SIO0) (SIO1) (SIO2) (SIO3)
Elite Semiconductor Memory Technology Inc.
Publication Date: Aug. 2013
Revision: 1.1
2/63




PDF 파일 내의 페이지 : 총 30 페이지

제조업체: Elite Semiconductor

( elite )

F25D64QA data

데이터시트 다운로드
:

[ F25D64QA.PDF ]

[ F25D64QA 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


F25D64QA

64 Mbit Serial Flash Memory - Elite Semiconductor