F25L01PA 반도체 회로 부품 판매점
3V Only 1 Mbit Serial Flash Memory
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 Elite Semiconductor |
ESMT
Flash
FEATURES
y Single supply voltage 2.7~3.6V
y Standard, Dual SPI
y Speed
- Read max frequency: 33MHz
- Fast Read max frequency: 50MHz; 86MHz; 100MHz
- Fast Read Dual max frequency: 50MHz / 86MHz
(100MHz / 172MHz equivalent Dual SPI)
y Low power consumption
- Active current: 22 mA
- Standby current: 25 μ A
- Deep Power Down current: 10 μ A
y Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
y Program
- Page programming time: 1.5 ms (typical)
F25L01PA (2D)
3V Only 1 M bit Serial Flash Memory
with Dual Output
y Erase
- Chip erase time 1 sec (typical)
- Block erase time 0.75 sec (typical)
- Sector erase time 90 ms (typical)
y Page Programming
- 256 byte per programmable page
y SPI Serial Interface
- SPI Compatible: Mode 0 and Mode 3
y End of program or erase detection
y Write Protect ( WP )
y Hold Pin ( HOLD )
y All Pb-free products are RoHS-Compliant
ORDERING INFORMATION
Product ID
F25L01PA –50PG2D
F25L01PA –86PG2D
F25L01PA –100PG2D
F25L01PA –50SG2D
F25L01PA –86SG2D
F25L01PA –100SG2D
Speed
50MHz
86MHz
100MHz
50MHz
86MHz
100MHz
Package
8-lead
SOIC
150 mil
8-pin
TSSOP
173 mil
(4.4mm)
Comments
Pb-free
Pb-free
GENERAL DESCRIPTION
The F25L01PA is a 1Megabit, 3V only CMOS Serial Flash
memory device. The device supports the standard Serial
Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory
devices reliably store memory data even after 100,000
programming and erase cycles.
The memory array can be organized into 512 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction.
The device features sector erase architecture. The memory array
is divided into 32 uniform sectors with 4K byte each; 2 uniform
blocks with 64K byte each. Sectors can be erased individually
without affecting the data in other sectors. Blocks can be erased
individually without affecting the data in other blocks. Whole chip
erase capabilities provide the flexibility to revise the data in the
device. The device has Sector, Block or Chip Erase but no page
erase.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2013
Revision: 1.2
1/31
ESMT
PIN CONFIGURATIONS
8- Lead SOIC
(SOIC 8L, 150mil Body, 1.27mm Pin Pitch)
CE 1
SO 2
WP 3
VSS
4
8 VDD
7 HOLD
6 SCK
5 SI
F25L01PA (2D)
8- Pin TSSOP
(TSSOP 8P, 173mil(4.4mm) Body, 0.65mm Pin Pitch)
CE
SO / SIO1
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI / SIO0
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2013
Revision: 1.2
2/31
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제조업체: Elite Semiconductor
( elite )
F25L01PA data
데이터시트 다운로드 :
[ F25L01PA.PDF ]
[ F25L01PA 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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