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PDF HWC27NC Data sheet ( Hoja de datos )
| Número de pieza | HWC27NC | |
| Descripción | C-Band Power FET Non-Via Hole Chip | |
| Fabricantes | Hexawave | |
| Logotipo |  |
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Features
• Low Cost GaAs Power FET
• Class A or Class AB Operation
• 11 dB Typical Gain at 4 GHz
• 5V to 10V Operation
Description
The HWC27NC is a medium power GaAs FET
designed for various L-band & S-band
applications.
Absolute Maximum Ratings
VDS
VGS
ID
IG
TCH
TSTG
PT*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
* mounted on an infinite heat sink
+15V
-5V
IDSS
2mA
175°C
-65 to +175°C
3.5W
HWC27NC
C-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
Outline Dimensions
650
Source
435 1
3
215 2
4
Source
0.0
0.0 58.5
344.5 400
Unit: µm
Thickness: 100 ± 5
Chip size ± 50
Bond Pads 1-2 (Gate):
Bond Pads 3-4 (Drain):
60 x 60
60 x 60
Electrical Specifications (TA=25°C) f = 4 GHz for all RF Tests
Symbol
IDSS
Parameters & Conditions
Saturated Current at VDS=3V, VGS=0V
Units
mA
Min.
300
VP Pinch-off Voltage at VDS=3V, ID=20mA
V -3.5
gm Transconductance at VDS=3V, ID=200mA
mS
-
P1dB
G1dB
PAE
Power Output at Test Points
VDS=10V, ID=0.5 IDSS
Gain at 1dB Compression Point
VDS=10V, ID=0.5 IDSS
Power-Added Efficiency (POUT = P1dB)
VDS=10V, ID=0.5 IDSS
dBm
dB
%
27
9
30
Typ.
400
-2.0
250
28
10
40
Max.
600
-1.5
-
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet HWC27NC.PDF ] | |
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