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RF6280 반도체 회로 부품 판매점

POWER MANAGEMENT IC



RF Micro Devices 로고
RF Micro Devices
RF6280 데이터시트, 핀배열, 회로
Preliminary
RF6280
POWER MANAGEMENT IC
Package Style: 15-Bump WLCSP, 4x4 Array, 2mmx2mm
Features
„ Peak Efficiency Up To 96%
„ High Efficiency Over Various
Loads
„ Transient Response <10μs
„ 650mA Current Capability
„ Variable Output Voltage (0V
to VBATT)
„ 2.5MHz PWM Switching Fre-
quency
„ Automatic Bypass Mode
„ Over Temperature Shutdown
„ Current Limit
„ Analog Bias Control (Auto-
matic and Buffer)
„ Three Individual Fast Tran-
sient 2.85V LDOs
„ Controls up to 3 UMTS PAs
„ Small, Wafer-Level, Chip-
Scale Package
Applications
„ W-CDMA Handsets
Functional Block Diagram
Product Description
The RF6280 is a multi-functional Power Management IC which is used in conjunc-
tion with power amplifiers and designed to be used in 3V handheld systems. The
RF6280 consists of a Pulse Width Modulated (PWM) voltage mode DC-DC con-
verter, three 2.85V LDOs, and analog bias control circuit to adjust the PA bias. The
DC-DC Converter is a buck converter that provides high efficiency over a wide out-
put voltage range with minimal ripple. It has a fast response to load and line tran-
sients, and fast response to programmed (VSET) voltage changes. The converter
includes an auto-bypass function which allows the handset to operate at lower bat-
tery voltage while helping maintain PA linearity at maximum output power. The con-
verter output voltage is set by a variable control voltage, VSET. The RF6280 has
three individual LDOs which are enabled by a digital two bit logic signal. The three
LDO outputs are used for band select in tri-band W-CDMA handsets.
Ordering Information
RF6280
Power Management IC
RF6280PCBA-41X Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
9GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A2 DS090304
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 16


RF6280 데이터시트, 핀배열, 회로
RF6280
Preliminary
Absolute Maximum Ratings
Parameter
Input Supply Voltage (VBAT_ABS)
Analog Input (VSET)
VCTRL_IN
VENO,1
Operating Ambient Temperature
(TCASE)
Storage Temperature (TSTORE)
Electrostatic Protection (VHBM)
Maximum Junction Temperature
Converter Output Current
LDO Output Current
Analog Bias Control Current
Rating
-0.2 to +6.0
VBAT - 0.2
VBAT - 0.2
VBAT - 0.2
-30 to +85
-40 to +150
-2000 to +2000
150
1000
10
5
Unit
V
V
V
V
°C
°C
V
°C
mA
mA
μA
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
DC-DC Converter
Operating Battery Voltage (VBAT)
VSET (VSET)
VSET Current
VOUT Transfer Function Gain
Output Current (ILOAD)
Load Regulation
Line Regulation
Dropout Voltage (VDO) 100% DC
Dropout Voltage (Bypass)
Output Ripple Voltage
Efficiency (DC-to-DC Converter)
Frequency (FSW)
DC Idle Current
DC Idle Current
DC Leakage
VOUT Start-up Time
VOUT Transition Time - Rising
VOUT Transition Time - Falling
VSET Bypass Voltage (VSETBYP)
Bypass to SMPS Transition Time
Specification
Min. Typ. Max.
3.0
0
2.35
1.50
1.45
3.7
2.45
2
0.8
175
60
8
96
92
60
2.50
1.30
1.60
10
8
4
5
1.55
20
5.5
2.0
1.0
2.55
650
30
20
300
100
30
3.50
2.75
2.75
1.0
30
30
25
25
1.65
50
Unit
V
V
μA
V/V
mA
mV/A
mV/V
mV
mV
mVP-P
%
%
%
MHz
mA
mA
μA
μs
μs
μs
μs
V
μs
Condition
L=1.5μH, C3=4.7μF, 25°C, VBAT=3.7V (typ.);
Min/Max: -30°C to 85°C, VBAT=3.0V to 5.5V
VSET = 1.7 V
VSET=0.24V to 1.36V, VOUT/VSET
IOUT=25mA to 200mA, VOUT=1V
VBAT=3.1V to 4.6V, ILOAD=100mA, VOUT=1.0V
VSET=1.6V, ILOAD=500mA, ResrL=100mΩ
VBAT=3.1V, VSET=1.7V, ILOAD=500mA,
ResrL = 100 mΩ
VOUT=1.85V, duty cycle=50%
ILOAD=460mA, VOUT=3.4V
ILOAD=200mA, VOUT=1.5V
ILOAD=25mA, VOUT=0.6V
VSET=0V, no load, VCTRL_IN=1.0V (buffer
mode)
VSET=0V, no load, VCTRL_IN=0V (auto VCTRL
mode)
VSET=0V, no load, VEN1=VEN0=0V
VOUT=0V to 3.4V, no load
VOUT=0V to 0.6V, no load
VOUT=0.6V to 3.4V, ILOAD=450mA
VOUT=3.4V to 0.6V, ILOAD=15mA
VBAT < 3.3 V
VSET<1.45V, VBATT>3.70V
2 of 16
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A2 DS090304




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