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nELL |
SEMICONDUCTOR
8PT Series RRooHHSS
Sensitive and Standard SCRs, 8A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
8
600 to 1000
0.2 to 15
Unit
A
V
mA
DESCRIPTION
Available either in sensitive or standard gate
triggering levels, the 8A SCR series is suitable
to fit all modes of control found in applications
such as overvoltage crowbar protection, motor
control circuits in power tools and kitchen aids,
inrush current limiting circuits, capacitive
discharge ignition and voltage regulation circuits.
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space.
A
K
A
G
TO-251 (I-PAK)
(8PTxxF)
A
A
A
K
G
TO-252 (D-PAK)
(8PTxxG)
KAG
KA G
TO-220AB (Non-lnsulated)
(8PTxxA)
TO-220AB (lnsulated)
(8PTxxAI)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
IT(RMS)
IT(AV)
ITSM
I2t
TO-251/TO-252/TO-220AB
TO-220AB insulated
TO-251/TO-252/TO-220AB
TO-220AB insulated
F =50 Hz
F =60 Hz
tp = 10 ms
Tc=110°C
Tc=100°C
Tc=110°C
Tc=100°C
t = 20 ms
t = 16.7 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
dI/dt
IGM
PG(AV)
Tstg
F = 60 Hz
Tp = 20 µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Operating junction temperature range
Tj
VALUE
8
5.1
95
100
45
50
4
1
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A2s
A/µs
A
W
ºC
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Page 1 of 7
SEMICONDUCTOR
8PT Series RRooHHSS
STANDARD ELECTRICAL SPECIFICATIONS
SYMBOL
TEST CONDITIONS
IGT
VGT
VGD
IH
IL
dV/dt
VTM
Vto
Rd
IDRM
IRRM
VD = 12 V, RL = 30Ω
VD = VDRM, RL = 3.3KΩ
IT = 100 mA, gate open
IG = 1.2 IGT
VD = 67% VDRM, gate open
ITM = 16A, tP = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
(TJ = 25 ºC, unless otherwise specified)
8PTxxxx
Min.
Max.
Max.
T-
0.5 2
5 15
1.3
Tj = 125°C
Min.
Max.
0.2
25 30
Max. 30 70
Tj = 125°C
Tj = 25°C
Min.
Max.
50 150
1.6
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Max.
Max.
Max.
0.85
46
5
1
SENSITIVE ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITIONS
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vto
Rd
IDRM
IRRM
VD = 12 V, RL = 140Ω
VD = VDRM, RL = 3.3KΩ, RGK=220Ω
IRG = 10 µA
IT = 50 mA, RGK = 1 KΩ
IG = 1 mA, RGK = 1 KΩ
VD = 67% VDRM, RGK = 220Ω
ITM = 16A, tP = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM, RGK = 220Ω
(Tj = 25 ºC, unless otherwise specified)
8PTxxxx-S
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Max.
Max.
Min.
Min.
Max.
Max.
Min.
Max.
Max.
Max.
Max.
200
0.8
0.1
8
5
6
5
1.6
0.85
46
5
1
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Junction to case (DC)
Rth(j-a)
Junction to ambient (DC)
S=Copper surface under tab
Parameter
IPAK/DPAK/TO-220AB
S = 0.5 cm2
TO-220AB insulated
D-PAK
I-PAK
TO-220AB, TO-220AB insulated
VALUE
1.3
4.6
70
100
60
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
UNIT
°C/W
°C/W
www.nellsemi.com
Page 2 of 7
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