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Toshiba |
2SK2201
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV)
2SK2201
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z 4 V gate drive
z Low drain−source ON-resistance
: RDS (ON) = 0.28 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 3.5 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V)
z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
100
100
±20
3
12
20
140
3
2
150
−55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to case
Rth (ch−c)
6.25 °C / W
JEDEC
―
Thermal resistance, channel to
ambient
Rth (ch−a)
125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 25 mH, RG = 25 Ω, IAR = 3 A
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-20
Electrical Characteristics (Ta = 25°C)
2SK2201
Characteristic
Gate leakage current
Drain cutoff current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 2 A
VGS = 10 V, ID = 2 A
VDS = 10 V, ID = 2 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Min Typ. Max Unit
— — ±10 μA
— — 100 μA
100 —
—
V
0.8 — 2.0
V
— 0.36 0.45
Ω
— 0.28 0.35
1.5 3.5
—
S
— 280 —
— 50 — pF
— 105 —
— 20 —
Switching time
Turn−on time
Fall time
ton
tf
— 50 —
ns
— 40 —
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
toff
Qg
Qgs VDD ≈ 80 V, VGS = 10 V, ID = 3 A
Qgd
— 170 —
— 13.5 —
— 8.5 —
—5—
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = 3 A, VGS = 0 V
IDR = 3 A, VGS = 0 V, dIDR / dt = 50 A / μs
Min Typ. Max Unit
—— 3 A
— — 12 A
— — −1.5 V
— 100 —
ns
— 0.2 — μC
Marking
K2201
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-20
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