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PDF LE25S20MB Data sheet ( Hoja de datos )
| Número de pieza | LE25S20MB | |
| Descripción | 2M-bit (256K x 8) Serial Flash Memory | |
| Fabricantes | ON Semiconductor | |
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LE25S20MB
Advance Information
CMOS LSI
2M-bit (256K x 8)
Serial Flash Memory
Overview
The LE25S20MB is a SPI bus flash memory device with a 2M bit (256K
8-bit) configuration. It uses a single 1.8V power supply. While making the
most of the features inherent to a serial flash memory device, the
LE25S20MB is housed in an 8-pin ultra-miniature package. All these
features make this device ideally suited to storing program in applications
such as portable information devices, which are required to have increasingly
more compact dimensions. The LE25S20MB also has a small sector erase
capability which makes the device ideal for storing parameters or data that
have fewer rewrite cycles and conventional EEPROMs cannot handle due to
insufficient capacity.
Features
Read/write operations enabled by single 1.8V power supply :
1.65 to 1.95V supply voltage range
Operating frequency : 40MHz
Temperature range
: 40 to 85C
Serial interface
: SPI mode 0, mode 3 supported
Sector size
: 4K bytes/small sector, 64K bytes/sector
Small sector erase, sector erase, chip erase functions
Page program function (256 bytes/page)
Block protect function
Highly reliable read/write
Number of rewrite times : 100,000 times
Small sector erase time : 40ms (typ), 150ms (max)
Sector erase time
: 80ms (typ), 250ms (max)
Chip erase time
: 300ms (typ), 3.0s (max)
Page program time : 3.0ms/256 bytes (typ), 3.5ms/256 bytes (max)
Status functions
: Ready/busy information, protect information
Data retention period : 20 years
Package
: SOP8K (200mil)
www.onsemi.com
SOP8K (200mil)
* This product is licensed from Silicon Storage Technology, Inc. (USA).
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
ORDERING INFORMATION
See detailed ordering and shipping information on page 22 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
October 2014 - Rev. P0
1
Publication Order Number :
LE25S20MB/D
1 page  
Table 3 Command Settings
2M Bit
sector(64KB)
3
2
1
0
LE25S20MB
small sector
63
to
48
47
to
32
31
to
16
15
to
2
1
0
address space(A23 to A0)
03F000h
03FFFFh
030000h
02F000h
030FFFh
02FFFFh
020000h
01F000h
020FFFh
01FFFFh
010000h
00F000h
010FFFh
00FFFFh
002000h
001000h
000000h
002FFFh
001FFFh
000FFFh
www.onsemi.com
5
5 Page 
LE25S20MB
6. Small Sector Erase
Small sector erase is an operation that sets the memory cell data in any small sector to "1". A small sector consists
of
4Kbytes. "Figure 11 Small Sector Erase" shows the timing waveforms, and Figure 20 shows a small sector erase
flowchart. The small sector erase command consists of the first through fourth bus cycles, and it is initiated by
inputting the 24-bit addresses following (20h) or (D7h). Addresses A17 to A12 are valid, and Addresses A23 to
A18 are "don't care". After the command has been input, the internal erase operation starts from the rising CS edge,
and it ends automatically by the control exercised by the internal timer. Erase end can also be detected using status
register RDY.
Figure 11 Small Sector Erase
CS
Self-timed
Erase Cycle
tSSE
SCK
Mode3 0 1 2 3 4 5 6 7 8
Mode0
15 16 23 24 31
8CLK
SI
20h / D7h
Add. Add. Add.
MSB
High Impedance
SO
7. Sector Erase
Sector erase is an operation that sets the memory cell data in any sector to "1". A sector consists of 64Kbytes.
"Figure 12 Sector Erase" shows the timing waveforms, and Figure 20 shows a sector erase flowchart. The sector
erase command consists of the first through fourth bus cycles, and it is initiated by inputting the 24-bit addresses
following (D8h). Addresses A17 to A16 are valid, and Addresses A23 to A18 are "don't care". After the command
has been input, the internal erase operation starts from the rising CS edge, and it ends automatically by the control
exercised by the internal timer. Erase end can also be detected using status register RDY.
Figure 12 Sector Erase
CS
Self-timed
Erase Cycle
tSE
SCK
SI
SO
Mode3
Mode0
012345678
15 16 23 24 31
8CLK
MSB
D8h
Add. Add. Add.
High Impedance
www.onsemi.com
11
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