A2016 반도체 회로 부품 판매점
PNP Transistor - 2SA2016
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 Sanyo |
Ordering number:ENN6309A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA2016/2SC5569
DC/DC Converter Applications
Applications
Package Dimensions
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of FBET and MBIT processes.
· High current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall package facilitales miniaturization in end
products.
· High allowable power dissipation.
Specifications
( ) : 2SA2016
unit:mm
2163
[2SA2016/2SC5569]
4.5
1.6
1.5
32
0.5
0.4
1.5
3.0
0.75
1
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Mounted on a ceramic board (250mm2×0.8mm)
Tc=25˚C
Ratings
(–50)80
(–)50
(–)6
(–)7
(–)10
(–)1.2
1.3
3.5
150
–55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking : 2SA2016 : AW 2SC5569 : FF
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)500mA
VCE=(–)10V, IC=(–)500mA
VCB=(–)10V, f=1MHz
Ratings
min typ max
Unit
(–)0.1 µA
(–)0.1 µA
200 560
(290)
MHz
330 MHz
(50)28
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52501TS KT TA-3259 No.6309–1/5
2SA2016/2SC5569
Continued on preceding page.
Parameter
Symbol
Conditions
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
VCE(sat)
IC=(–)3.5A, IB=(–)175mA
IC=(–)2A, IB=(–)40mA
VBE(sat) IC=(–)2A, IB=(–)40mA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO
V(BR)EBO
ton
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
IB2
OUTPUT
VR
50Ω
RB
+
+
100µF 470µF
RL
VBE=--5V
VCC=25V
20IB1= --20IB2= IC=2.5A
(For PNP, the polarity is reversed.)
Ratings
min typ
(–230)
160
(–240)
110
(–)0.83
(–50)
80
(–)50
(–)6
(40)30
(225)
420
25
max
(–390)
240
(–400)
170
(–)1.2
Unit
mV
mV
mV
mV
V
V
V
V
V
ns
ns
ns
ns
--7
2SA2016
--6
--5
IC -- VCE
--90mA
--80mA
--70mA
--60mA
--4 --100mA
--3
--50mA
--40mA
--30mA
--20mA
--2
--10mA
--1
0 IB=0
0
--0.4
--0.8
--1.2
--1.6
--2.0
Collector-to-Emitter Voltage, VCE – V IT00206
--8 IC -- VBE
2SA2016
--7 VCE=--2V
--6
--5
--4
--3
--2
--1
0
0
--0.2 --0.4 --0.6 --0.8
--1.0 --1.2 --1.4
Base-to-Emitter Voltage, VBE – V IT00208
7
90mA
6
5
4
3
2
IC -- VCE
80mA
70mA
60mA
50mA
40mA
30mA
20mA
10mA
1
0 2SC5569
IB=0
0 0.4 0.8 1.2 1.6 2.0
Collector-to-Emitter Voltage, VCE – V IT00207
8 IC -- VBE
2SC5569
7 VCE=2V
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE – V IT00209
No.6309–2/5
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