TF202THC 반도체 회로 부품 판매점
N-Channel JFET
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 ON Semiconductor |
Ordering number : ENA1285B
TF202THC
N-Channel JFET
20V, 140 to 350μA, 1.0mS, VTFP
http://onsemi.com
Features
• Ultrasmall package facilitates miniaturization in end products
• Especially suited for use in electret condenser microphone for audio equipments and telephones
• Excellent voltage characteristics
• Excellent transient characteristics
• Adoption of FBET process
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Gate to Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
VGDO
IG
ID
PD
Tj
Storage Temperature
Tstg
Conditions
Ratings
--20
10
1
100
150
--55 to +150
Unit
V
mA
mA
mW
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7031A-001
1.4
0.25 0.1
3
TF202THC-4-TL-H
TF202THC-5-TL-H
0 to 0.02
1
0.45
2
0.2
12
3
1 : Drain
2 : Source
3 : Gate
VTFP
Product & Package Information
• Package
: VTFP
• JEITA, JEDEC
: SC-106A
• Minimum Packing Quantity : 8,000 pcs./reel
Packing Type: TL
Marking
TL
Electrical Connection
1
3
E
2
Semiconductor Components Industries, LLC, 2014
July, 2014
71014 TKIM/82008GB TKIM TC-00001480 No. A1285-1/6
TF202THC
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Gate to Drain Breakdown Voltage
V(BR)GDO IG=--100μA
Cutoff Voltage
VGS(off)
VDS=5V, ID=1μA
Drain Current
IDSS
VDS=5V, VGS=0V
Forward Transfer Admittance
| yfs |
VDS=5V, VGS=0V, f=1kHz
Input Capacitance
Ciss
VDS=5V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0V, f=1MHz
[Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.]
Voltage Gain
GV VIN=10mV, f=1kHz
Reduced Voltage Characteristic
ΔGVV
VIN=10mV, f=1kHz, VCC=4.5V → 1.5V
Frequency Characteristic
ΔGvf
f=1kHz to 110Hz
Input Impedance
ZIN f=1kHz
Output Impedance
ZO f=1kHz
Total Harmonic Distortion
THD
VIN=30mV, f=1kHz
Output Noise Voltage
VNO
VIN=0V, A Curve
min
--20
--0.2
140*
0.5
Ratings
typ
--0.6
1.0
3.5
0.65
max
--1.0
350*
Unit
V
V
μA
mS
pF
pF
--3.0
dB
--1.2
--3.5
dB
--1.0
dB
25
1000
MΩ
Ω
1.2 %
--110
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
* : The TF202THC is classified by IDSS as follows : (unit : μA)
Rank
4
5
IDSS
140 to 240
210 to 350
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
1kΩ
15pF
33μF
+
VCC=4.5V
VCC=1.5V
OSC
VTVM V THD B A
Output Impedance
Ordering Information
Device
TF202THC-4-TL-H
TF202THC-5-TL-H
Package
VTFP
VTFP
Shipping
8,000pcs./reel
8,000pcs./reel
memo
Pb Free and Halogen Free
No. A1285-2/6
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TF202THC data
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