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PDF FDZ4670S Data sheet ( Hoja de datos )
| Número de pieza | FDZ4670S | |
| Descripción | N-Channel PowerTrench SyncFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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March 2008
FDZ4670S
N-Channel PowerTrench® SyncFET TM
30V, 25A, 2.4mΩ
tm
Features
Max rDS(on) = 2.4mΩ at VGS = 10V, ID = 25A
Max rDS(on) = 4.0mΩ at VGS = 4.5V, ID = 19A
Ultra-thin package: less than 0.85mm height when mounted to
PCB
Outstanding thermal transfer characteristics
Ultra-low gate charge x rDS(on) product
RoHS Compliant
General Description
Combining Fairchild's 30V PowerTrench® process with
state-of-the-art BGA packaging, the FDZ4670S minimizes both
PCB space and rDS(on). This BGA MOSFET embodies a
breakthrough in packaging technology which enables the device
to combine excellent thermal transfer characteristics, high
current handling capacity, ultra-low profile packaging, low gate
charge and low rDS(on) incorporating SyncFET technology. This
device has the added benefit of an efficient monolithic Schottky
body diode to reduce Trr and diode forward voltage.
This MOSFET feature faster switching and lower gate charge
than other MOSFETs with comparable rDS(on) specifications
resulting in DC/DC power supply designs and POL converters
with higher overall efficiency.
Applications
DC - DC Conversion
POL converters
Index slot
D
G
Bottom
FLFBGA 3.5X4.0
Top
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
S
Ratings
30
±20
25
107
2.5
1.25
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
0.85
50
100
°C/W
Device Marking
4670S
Device
FDZ4670S
Package
FLFBGA 3.5X4.0
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDZ4670S Rev.B1
1
www.fairchildsemi.com
1 page  
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Charateristics
Fairchild's SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky diode in
parallel with a MOSFET. Figure 22 shows the reverse recovery
characteristic of the FDZ4670S.
TIME : 12.5ns/div
Figure 22. FDZ4670S SyncFET body
diode reverse recovery characteristic
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an equivalent size
MOSFET produced without SyncFET (FDZ4670).
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
0.1
0.01
TJ = 125oC
0.001
TJ = 100oC
0.0001
TJ = 25oC
0.00001
0
5 10 15 20 25 30 35
VR, REVERSE VOLTAGE (V)
Figure 24. SyncFET body diode reverses
leakage versus drain-source voltage and
temperature
TIME : 12.5ns/div
Figure 23. Non-SyncFET (FDZ4670) body
diode reverse recovery characteristic
©2008 Fairchild Semiconductor Corporation
FDZ4670S Rev.B1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDZ4670S.PDF ] | |
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