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GD25D10B 반도체 회로 부품 판매점

Uniform sector dual and quad serial flash



ELM 로고
ELM
GD25D10B 데이터시트, 핀배열, 회로
http://www.elm-tech.com
GD25D10B
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GD25D10B 데이터시트, 핀배열, 회로
GD25D10BxIGx Uniform sector dual and quad serial flash
http://www.elm-tech.com
- Content -
Page
1. FEATURES -------------------------------------------------------------------------------------------------
2. GENERAL DESCRIPTION -----------------------------------------------------------------------------
3. MEMORY ORGANIZATION --------------------------------------------------------------------------
4. DEVICE OPERATION ----------------------------------------------------------------------------------
5. DATA PROTECTION ------------------------------------------------------------------------------------
6. STATUS REGISTER -------------------------------------------------------------------------------------
7. COMMANDS DESCRIPTION -------------------------------------------------------------------------
TABLE OF ID DEFINITION ------------------------------------------------------------------------------
7.1. Write enable (wren) (06H) --------------------------------------------------------------------------
7.2. Write disable (WRDI) (04H) ------------------------------------------------------------------------
7.3. Read status register (WDSR) (05H) ----------------------------------------------------------------
7.4. Write status register (WRSR) (01H) ---------------------------------------------------------------
7.5. Read data bytes (READ) (03H) ---------------------------------------------------------------------
7.6. Read data bytes at higher speed (Fast read) (0BH) ----------------------------------------------
7.7. Dual output fast read (3BH) -------------------------------------------------------------------------
7.8. Page program (PP) (02H) ----------------------------------------------------------------------------
7.9. Fast page program (FPP) (F2H) --------------------------------------------------------------------
7.10. Sector erase (SE) (20H) -----------------------------------------------------------------------------
7.11. 32KB Block erase (BE) (52H) ---------------------------------------------------------------------
7.12. 64KB Block erase (BE) (D8H) ---------------------------------------------------------------------
7.13. Chip erase (CE) (60/C7H) --------------------------------------------------------------------------
7.14. Deep power-down (DP) (B9H) ---------------------------------------------------------------------
7.15. Release from deep power-down / read device ID (ABH) ---------------------------------------
7.16. Read manufacture ID / device ID (REMS) (90H) ------------------------------------------------
7.17. Read identification (RDID) (9FH) -----------------------------------------------------------------
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8. ELECTRICAL CHARACTERISTICS --------------------------------------------------------------- 21
8.1. Power-ON timing -------------------------------------------------------------------------------------
8.2. Initial delivery state ----------------------------------------------------------------------------------
8.3. Data retention and endurance -----------------------------------------------------------------------
8.4. Latch up characteristics -----------------------------------------------------------------------------
8.5. Absolute maximum ratings -------------------------------------------------------------------------
8.6. Capacitance measurement conditions -------------------------------------------------------------
8.7. DC characteristics -----------------------------------------------------------------------------------
8.8. AC characteristics -----------------------------------------------------------------------------------
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