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ROHM Semiconductor |
Transistors
2SB1275 / 2SB1236A
Power Transistor (−160V , −1.5A)
2SB1275 / 2SB1236A
zFeatures
1) High breakdown voltage.(BVCEO = −160V)
2) Low collector output capacitance.
(Typ. 30pF at VCB = 10V)
3) High transition frequency.(fT = 50MHZ)
4) Complements the 2SD1918 / 2SD1857A.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector 2SB1275
power
dissipation 2SB1236A
Junction temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Limits
−160
−160
−5
−1.5
−3
1
10
1
150
Storage temperature
Tstg
−55∼+150
∗ 1 Single pulse Pw=100ms
∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Unit
V
V
V
A(DC)
A(Pulse)
∗1
W(Tc=25°C)
W ∗2
°C
°C
zExternal dimensions (Unit : mm)
2SB1275
ROHM : CPT3
EIAJ : SC-63
5.5 1.5
0.9
0.8Min.
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SB1236A
6.8
2.5
0.65Max.
ROHM : ATV
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1275
CPT3
P
TL
2500
2SB1236A
ATV
PQ
TV2
2500
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Symbol
BVCBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
2SB1275
2SB1236A
Transition frequency
Output capacitance
∗Measured using pulse current.
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−160
−160
−5
−
−
−
82
82
−
−
Typ.
−
−
−
−
−
−
−
−
50
30
Max.
−
−
−
−1
−1
−2
180
270
−
−
Unit
V
V
V
µA
µA
V
−
−
MHz
pF
Conditions
IC = −50µA
IC = −1mA
IE = −50µA
VCB = −120V
VEB = −4V
IC/IB = −1A/−0.1A
VCE = −5V , IC = −0.1A
VCE = −5V , IE = 0.1A , f = 30MHz
VCB = −10V , IE =0A , f = 1MHz
∗
Rev.A
1/3
Transistors
2SB1275 / 2SB1236A
zElectrical characteristics curves
−1.0
Ta=25°C
−0.8
−10mA
−9mA
−0.6 −8mA
−7mA
−0.4
PC=1W
−6mA
−5mA
−4mA
−3mA
−0.2
−2mA
0
IB= 0mA
−1mA
0
−1 −2
−3 −4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
−10
VCE= −5V
−5
−2
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8
BASE TO EMITTER VOLTAGE : VBE (V)
1000
Ta=25°C
500
200
VCE= −10V
100
50
20
−5V
10
5
2
1
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A)
Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current ( )
1000
500
200 Ta=100°C
100
50 −25°C
20
10
5
25°C
VCE= −10V
2
1
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( )
−10
Ta=25°C
−5
−2
−1
−0.5
IC/IB=50
−0.2
−0.1 20
10
−0.05
−0.02
−0.01
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs. collector current
−10
IC/IB=10
−5
−2
−1 Ta= −25°C
25°C
−0.5
100°C
−0.2
−0.1 Ta=100°C
−0.05
−25°C
−0.02
VBE(sat)
VCE(sat)
25°C
−0.01
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage
Base-emitter saturation voltage vs. collector current
1000
VCE= −5V
500 Ta=25°C
200
100
50
20
10
5
2
1
12
5 10 20 50 100 200 500 1000
EMITTER CURRENT : IE (mA)
Fig.7 Resistance raito vs. emmiter current
1000
f=1MHz
500 IE=0A
Ta=25°C
200
100
50
20
10
5
2
1
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance vs.
collector-base voltage
−10
−5 Ic Max. (Pulse∗)
−2
Pw=10ms∗
−1
−0.5 100ms∗
−0.2 DC
−0.1
−0.05
−0.02
−0.01
−0.005 Ta=25°C
∗ Single
−0.002 NONREPETITIVE
−0.001−0.1
PULSE
−0.2 −0.5 −1
−2 −5 −10
−20 −50 −100 −200 −500 −1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area (2SB1236A)
Rev.A
2/3
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