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Renesas |
RJJ0621DPP-E0
P Channel Power MOS FET
High Speed Switching
Features
VDSS : –60 V
RDS(on) : 56 m (MAX)
ID : –25 A
Lead Mount Type (TO-220FP)
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
1
23
G1
Preliminary Datasheet
R07DS0797EJ0100
Rev.1.00
Jun 08, 2012
S
3
1. Gate
2. Drain
3. Source
2
D
Application
DC-DC converter, Motor control, Solenoid control, etc.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current (DC)
Drain current (Pulsed)*1
ID
ID(pulse)
Avalanche current
IAP
Channel dissipation
Channel to case thermal impedance
Pch
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. Pulse width limited by safe operating area.
Ratings
–60
+10/–20
–25
–50
–25
25
5.0
–55 to +150
–55 to +150
Unit
V
V
A
A
A
W
C/W
°C
°C
(Tc = 25°C)
Conditions
VGS = 0 V
VDS = 0 V
L = 100 H
R07DS0797EJ0100 Rev.1.00
Jun 08, 2012
Page 1 of 6
RJJ0621DPP-E0
Electrical Characteristics
Item
Drain to source breakdown voltage
Drain to source leakage current
Gate to source leak current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Symbol
V(BR)DSS
IDSS
IGSS
IGSS
VGS(off)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
Min.
–60
—
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
–1.7
45
65
1550
190
100
15
25
100
50
–0.9
Max.
—
–1
0.1
–0.1
–2.5
56
95
—
—
—
—
—
—
—
–1.5
Preliminary
Unit
V
A
A
A
V
m
m
pF
pF
pF
ns
ns
ns
ns
V
(Tc = 25°C)
Conditions
ID = –10 mA, VGS = 0 V
VDS = –60 V, VGS = 0 V
VGS = +10 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
ID = –1 mA, VDS = –10 V
ID = –12.5 A, VGS = –10 V
ID = –12.5 A, VGS = –4.5 V
VDS = –10 V
VGS = 0 V
f = 1 MHz
VDD = –30 V
ID = –12.5 A
VGS = –10 V
RG = 25
IF = –12.5 A, VGS = 0 V
R07DS0797EJ0100 Rev.1.00
Jun 08, 2012
Page 2 of 6
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