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PDF NP109N04PUG Data sheet ( Hoja de datos )
| Número de pieza | NP109N04PUG | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP109N04PUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
NP109N04PUG-E1-AY Note
NP109N04PUG-E2-AY Note
Pure Sn (Tin)
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in external electrode).
PACKAGE
TO-263 (MP-25ZP) typ. 1.5 g
FEATURES
• Super low on-state resistance
RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A)
• High current rating ID(DC) = ±110 A
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±110
±440
Total Power Dissipation (TC = 25°C)
PT1
220
Total Power Dissipation (TA = 25°C)
PT2
1.8
Channel Temperature
Tch 175
Storage Temperature
Tstg −55 to +175
Repetitive Avalanche Current Note2
IAR
60
Repetitive Avalanche Energy Note2
EAR
360
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.68
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18590EJ2V0DS00 (2nd edition)
Date Published December 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
VGS = 10 V
4 ID = 55 A
3
2
1
0
-100
Pulsed
-50 0 50 100 150
Tch - Channel Temperature - °C
200
SWITCHING CHARACTERISTICS
1000
tf
100
td(on)
td(off)
tr
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10 0 V
1
0.1
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
NP109N04PUG
<R>
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
0.01 0.1 1 10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
35
30
25
20
15
10
5
0
0
VDD = 32 V
20 V
8V
12
9
VGS 6
3
VDS
ID = 110 A
0
50 100 150 200
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10 100 1000
IF - Diode Forward Current - A
Data Sheet D18590EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP109N04PUG.PDF ] | |
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