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Inchange Semiconductor |
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD864
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1.5A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1.5A
·Complement to Type 2SB765
APPLICATIONS
·Medium speed and power switching applications.
i.cnABSOLUTE MAXIMUM RATINGS (Ta=25℃)
.iscsemSYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120 V
wwwVCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
3A
ICM Collector Current-Peak
Collector Power Dissipation
PC TC=25℃
Tj Junction Temperature
6A
30 W
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD864
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞
120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA , IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A, IB= -3mA
1.5 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A, IB=B -30mA
3.0 V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1.5A, IB= -3mA
2.0 V
VBE(sat)-2 Base-Emitter Saturation Voltage
i.cnICBO Collector Cutoff Current
.iscsemICEO Collector Cutoff Current
hFE DC Current Gain
wwwSwitching times
IC= 3A, IB=B -30mA
VCB= 120V, IE= 0
VCE= 100V, RBE= ∞
IC= 1.5A; VCE= 3V
1000
3.5 V
100 μA
10 μA
20000
ton Turn-on Time
tstg Storage Time
tf Fall Time
IC= 1.5A; IB1= -IB2= 3mA
0.5 μs
4.5 μs
1.1 μs
isc Website:www.iscsemi.cn
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