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PDF RDA5868E Data sheet ( Hoja de datos )
| Número de pieza | RDA5868E | |
| Descripción | SINGLE CHIP FOR BLUETOOTH | |
| Fabricantes | RDA | |
| Logotipo |  |
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SINGLE CHIP FOR BLUETOOTH
RDA5868E
Rev.0.92–Apr.2010
1 General Description
RDA5868E is a highly integrated single-chip IC
with radio transceiver and baseband processor,
which is compliant with Bluetooth 2.1 + EDR
specification and provides an optimal solution for
data and voice application.
RDA5868E provides UART which is specified as
HCI interfaces by Bluetooth SIG standard, and
also supports PCM audio interface.
RDA5868E has been designed on highest level of
integration to extremely reduce the number of
external component. It uses CMOS process with a
compact 6*6mm 40-pin QFN package.
Figure1-1. RDA5868E Top View
1.1 Bluetooth Features
z CMOS single-chip fully-integrated radio and
baseband
z Compliant with Bluetooth 2.1 + EDR specification
z Bluetooth Piconet and Scatternet support
z Support AFH
z ARM7-based microprocessor with on-chip ROM
and RAM
z Meet class1, class2 and class3 transmitting power
requirement
z Provides +8dbm transmitting power
z NZIF receiver with -90dBm sensitivity
z Battery power supply directly with internal LDO
z Support DCXO with internal oscillator circuit
z Up to 4Mbps high speed UART HCI support
z Support 1-wire and 2-wire WIFI Co-existence
handshake signals
z Low power consumption
z Minimum external component
1.2 Applications
z Mobile handset
z MP3,MP4 and PMP
z GPS
z Other portable devices
Copyright © RDA Microelectronics Inc. 2009. All rights are reserved.
The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in
part without prior written permission of RDA.
1 page  
RDA Microelectronics, Inc.
RDA5868E Datasheet V0.92e
5 Bluetooth Section Electrical Characteristics
Table 5-1 DC Electrical Specification (Recommended Operation Conditions):
SYMBOL
DESCRIPTION
VBAT
Supply Voltage from battery or LDO
Tamb
VIL
VIH
VTH
Ambient Temperature
CMOS Low Level Input Voltage
CMOS High Level Input Voltage
CMOS Threshold Voltage
Notes:
1. VIO=2.8V, generated internally
MIN
3.3
-20
0
0.7*VIO
TYP
4.0
27
0.5*VIO
MAX
4.2
+50
0.3*VIO
VIO
UNIT
V
℃
V
V
V
Table 5-2 DC Electrical Specification (Absolute Maximum Ratings):
SYMBOL
DESCRIPTION
Tamb
IIN
VIN
Vlna
Ambient Temperature
Input Current
Input Voltage
LNA Input Level
Notes:
1. VIO=2.8V, generated internally
MIN TYP
-20
-10
-0.3
MAX
+50
+10
VIO+0.3
+10
UNIT
°C
mA
V
dBm
Table 5-3 Power consumption specification
(VBAT= 4.0 V, TA = +27℃, unless otherwise specified)
STATE
DESCRIPTION
DH1/DM1
DH3/DM3
DH5/DM5
HCI only active
Sleep
internal LDO off
Condition
TYP UNIT
24 mA
26 mA
27 mA
8.2 mA
300 μA
20 μA
The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in
part without prior written permission of RDA.
Page 5 of 17
5 Page 
RDA Microelectronics, Inc.
8 Application Circuit
Please refer to the <<RDA 5868E hardware application guide>>.
RDA5868E Datasheet V0.92e
The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in
part without prior written permission of RDA.
Page 11 of 17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet RDA5868E.PDF ] | |
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