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Renesas Technology |
2SK4150
Silicon N Channel MOS FET
High Speed Power Switching
Features
Capable of 2.5 V gate drive
Low drive current
Low on-resistance
RDS(on) = 4.0 typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C)
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92(1))
321
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
Pch
ch-a
Tch
Tstg
Preliminary Datasheet
REJ03G1909-0300
Rev.3.00
May 27, 2010
D
1. Source
2. Drain
3. Gate
S
Ratings
250
±10
0.4
1.6
0.4
1.6
0.75
166.7
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
C/W
C
C
REJ03G1909-0300 Rev.3.00
May 27, 2010
Page 1 of 6
2SK4150
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Min
250
±10
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
4.0
4.1
80
11.4
3.4
17
14
38
36
3.7
0.3
2.3
0.8
70
Max Unit
—V
—V
1 A
±10 A
1.5 V
5.7
5.9
— pF
— pF
— pF
— ns
— ns
— ns
— ns
— nC
— nC
— nC
1.2 V
— ns
Notes: 2. Pulse test
3. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = 100 A, VDS = 0
VDS = 250 V, VGS = 0
VGS = 8 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 0.2 A, VGS = 4 V Note2
ID = 0.2 A, VGS = 2.5 V Note2
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 0.2 A
VGS = 4 V
RL = 625
Rg = 10
VDD = 200 V
VGS = 4 V
ID = 0.4 A
IF = 0.4 A, VGS = 0 Note2
IF = 0.4 A, VGS = 0
diF/dt = 100 A/s
REJ03G1909-0300 Rev.3.00
May 27, 2010
Page 2 of 6
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