파트넘버.co.kr B788 데이터시트 PDF


B788 반도체 회로 부품 판매점

PNP Transistor - 2SB788



Panasonic Semiconductor 로고
Panasonic Semiconductor
B788 데이터시트, 핀배열, 회로
Transistor
2SB788
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD958
s Features
q High collector to emitter voltage VCEO.
q Low noise voltage NV.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–120
–120
–7
–50
–20
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
Noise voltage
NV
VCB = –50V, IE = 0
–100 nA
VCE = –50V, IB = 0
–1 µA
IC = –10µA, IE = 0
–120
V
IC = –1mA, IB = 0
–120
V
IE = –10µA, IC = 0
–7
V
VCE = –5V, IC = –2mA
180 700
IC = –20mA, IB = –2mA
– 0.6
V
VCB = –5V, IE = 2mA, f = 200MHz
150 MHz
VCE = 40V, IC = –1mA, GV = 80dB,
Rg = 100k, Function = FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
T
360 ~ 700
1


B788 데이터시트, 핀배열, 회로
Transistor
PC — Ta
500
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
hFE — IC
600
VCE=–5V
500
Ta=75˚C
400
25˚C
300 –25˚C
200
100
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
NV — IC
120
VCE=–10V
GV=80dB
Function=FLAT
100
80 Rg=100k
60
22k
40
4.7k
20
0
– 0.01 – 0.03
– 0.1 – 0.3
–1
Collector current IC (mA)
IC — VBE
–60
VCE=–5V
25˚C
–50
Ta=75˚C –25˚C
–40
–30
–20
–10
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
2SB788
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
25˚C Ta=75˚C
–25˚C
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
fT — IE
320
VCB=–10V
Ta=25˚C
280
240
200
160
120
80
40
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
Cob — VCB
5
IE=0
f=1MHz
Ta=25˚C
4
3
2
1
0
–1 –3
–10 –30 –100
Collector to base voltage VCB (V)
2




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