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Hitachi Semiconductor |
2SC5024
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics
fT = 300 MHz typ
• High breakdown voltage and low output
capacitance
VCEO = 200 V, Cob = 5.0 pF typ
• Suitable for wide band video amplifier
• Complimentary pair of 2SA1889
TO–126FM
123
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
———————————————————————————————————————————
Collector to base voltage
VCBO
200 V
———————————————————————————————————————————
Collector to emitter voltage
VCEO
200 V
———————————————————————————————————————————
Emitter to base voltage
VEBO
4
V
———————————————————————————————————————————
Collector current
IC 0.2 A
———————————————————————————————————————————
Collector peak current
ic(peak)
0.5
A
———————————————————————————————————————————
Collector power dissipation
PC
1.4 W
———————————————————————————————————————————
Collector power dissipation
PC*1
8W
———————————————————————————————————————————
Junction temperature
Tj 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Note: 1. Value at TC = 25°C.
2SC5024
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min Typ Max Unit Test Conditions
———————————————————————————————————————————
Collector to base
V(BR)CBO 200 —
—
V IC = 10 µA,
breakdown voltage
IE = 0
———————————————————————————————————————————
Collector to emitter
V(BR)CEO 200 —
—
V IC = 1 mA,
breakdown voltage
RBE = ∞
———————————————————————————————————————————
Emitter to base
V(BR)EBO
4
——
V IE = 10 µA,
breakdown voltage
IC = 0
———————————————————————————————————————————
Collector cutoff current
ICBO
— — 10 µA VCB = 160 V,
IE = 0
———————————————————————————————————————————
DC current
2SC5024B hFE
60 — 120
VCE = 5 V,
transfer ratio
——————————————————————
IC = 10 mA
2SC5024C hFE
100 —
200
———————————————————————————————————————————
Base to emitter voltage
VBE
— — 1.0 V VCE = 5 V,
IC = 30 mA
———————————————————————————————————————————
Collector to emitter
VCE(sat) — — 1.0 V IC = 30 mA,
saturation voltage
IB = 3 mA
———————————————————————————————————————————
Gain bandwidth product
fT
200 300 —
MHz VCE = 20 V,
IC = 30 mA
———————————————————————————————————————————
Collector output capacitance Cob
— 5.0 —
pF VCB = 30 V,
IE = 0,
f = 1 MHz
———————————————————————————————————————————
See characteristic curves of 2SC4704.
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