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Número de pieza | G50H603 | |
Descripción | IGW50N60H3 | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de G50H603 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
IGW50N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
1 page IGW50N60H3
Highspeedswitchingseriesthirdgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Cies
Coes
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=50.0A,
VGE=15V
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=150°C
min.
Value
typ.
max. Unit
- 2960 -
- 116 - pF
- 96 -
- 315.0 - nC
- 13.0 - nH
- -A
330
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=50.0A,
VGE=0.0/15.0V,
rG=7.0Ω,Lσ=90nH,
Cσ=60pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW50N60H3) reverse
recovery.
Value
Unit
min. typ. max.
- 23 - ns
- 37 - ns
- 235 - ns
- 24 - ns
- 1.45 - mJ
- 0.91 - mJ
- 2.36 - mJ
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=175°C,
VCC=400V,IC=50.0A,
VGE=0.0/15.0V,
rG=7.0Ω,Lσ=90nH,
Cσ=60pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW50N60H3) reverse
recovery.
Value
Unit
min. typ. max.
- 23 - ns
- 31 - ns
- 273 - ns
- 24 - ns
- 1.42 - mJ
- 1.13 - mJ
- 2.55 - mJ
5 Rev.2.2,2014-03-12
5 Page IGW50N60H3
Highspeedswitchingseriesthirdgeneration
D=0.5
0.1 0.2
0.1
0.05
0.02
0.01
single pulse
0.01
0.001
1E-6
i: 1 2 3 4 5
ri[K/W]: 7.0E-3 0.03736378 0.09205027 0.1299574 0.1835461
τi[s]: 4.4E-5 1.0E-4
7.2E-4
8.3E-3
0.07425315
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 21. IGBTtransientthermalimpedance
(D=tp/T)
11 Rev.2.2,2014-03-12
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet G50H603.PDF ] |
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