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Sanyo Semicon Device |
Ordering number : EN5319A
N-Channel Silicon MOSFET
FW203
Ultrahigh-Speed Switching Applications
Features
• Low ON resistance
• Ultrahigh-speed switching.
• Composite type with two 4V-drive N-channel MOSFETs
facilitating high-density mounting.
• Matched pair capability.
Package Dimensions
unit: mm
2129-SOP8
[FW203]
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
VDSS
VGSS
ID
IDP
PD
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board
(1000mm2×0.8mm) 1unit
Total Dissipation
PT Mounted on a ceramic board
(1000mm2×0.8mm)
Channel Temperature
Tch
Storage temperature
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
D-S Breakdown Voltage
V(BR)DSS
Zero-Gate-Voltage Drain Current IDSS
Gate-to-Source Leakage Current IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance yfs
Static Drain-to-Source
RDS(on)
ON-State Resistance
RDS(on)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance Crss
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=10V
ID=5A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Ratings
30
±20
5
48
1.7
Unit
V
V
A
A
W
2.0 W
150
–55 to +150
°C
°C
Ratings
Unit
min typ max
30 V
100 µA
±10 µA
1.0 2.5 V
58
S
36 46 mΩ
58 78 mΩ
550 pF
330 pF
120 pF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O1397TS (KOTO) TA-0100 No.5319-1/3
Continued from preceding page.
Parameter
Symbol
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
td(on)
tr
td(off)
tf
VSD
Switching Time Test Circuit
FW203
Conditions
See specified Test Circuit.
″
″
″
IS=5A, VGS=0
Electrical Connection
(Top view)
Ratings
min typ max
15
200
150
160
1.0 1.2
Unit
ns
ns
ns
ns
V
ASO
7
5
IDP
10µs
,,,,,,,3
,,,,,,,2
100µs
1ms
,,,,,,,10
7
,,,,,,,5
,,,,,,,3
2
1.0
7
5
3
2
ID
Mounted on a ceramic
Operation in this area
is limited by RDS(on).
Ta=25°C
board
10 ms
100 ms
(1000mm 2×0.8mm)
0.1 1pulse
7 1unit
5
2 3 5 7 1.0
2 3 5 7 10
23
Drain-to-Source Voltage, VDS – V
2.4 P D – Ta
5
2.0
1.7
1.6
1.2
0.8
Per unitTdoistaslipdaistisoipnation
0.4
Mounted on a ceramic board (1000mm2×0.8mm)
0
0 20 40 60 80 100 120
Ambient Temperature, Ta – °C
140
160
1.8 P D(FET 2) – P D(FET1)
1.7
1.6
1.4
1.2
1.0
0.8
0.6
Mounted on a ceramic board (1000mm ×2 0.8mm)
0.4
0.2
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Allowable Power Dissipation, PD(FET1) – W
No.5319-2/3
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