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Sanyo |
Ordering number : EN2555B
2SB1302
SANYO Semiconductors
DATA SHEET
2SB1302 PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Applications
• DC-DC converters, motor drivers, relay drivers, lamp drivers.
Features
• Adoption of FBET, MBIT processes.
• Low collector-to-emitter saturation voltage.
• Large current capacity.
• Fast switching speed.
• Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Marking : BJ
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Mounted on a ceramic board (250mm2✕0.8mm)
Ratings
--25
--20
--5
--5
--8
1.3
150
--55 to +150
Unit
V
V
V
A
A
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
www.semiconductor-sanyo.com/network
31710EA TK IM / 10904TN (KT)/O1598HA (KT)/D2680MO/4097TA, TS No.2555-1/4
2SB1302
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=--20V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--500mA
VCE=--2V, IC=--4A
VCE=--5V, IC=--200mA
VCB=--10V, f=1MHz
IC=--3A, IB=--60mA
IC=--3A, IB=--60mA
IC=--10μA, IE=0A
IC=--1mA, RBE=∞
IE=--10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
*: The 2SB1302 is classified by 500mA hFE as follows:
Rank
R
S
hFE
100 to 200
140 to 280
T
200 to 400
Ratings
min typ
100*
60
--25
--20
--5
320
60
--250
--1.0
40
200
10
max
--500
--500
400*
--500
--1.3
Unit
nA
nA
MHz
pF
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7007B-004
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
VR
IB1
IB2
RB
OUTPUT
RL
50Ω
+
100μF
VBE=5V
IC=10IB1= --10IB2= --2A
+
470μF
VCC= --10V
No.2555-2/4
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