파트넘버.co.kr B1295 데이터시트 PDF


B1295 반도체 회로 부품 판매점

PNP Transistor - 2SB1295



Sanyo 로고
Sanyo
B1295 데이터시트, 핀배열, 회로
Ordering number:EN2516
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1295/2SD1935
Low-Frequency General-Purpose
Amplifier Applications
Applications
· AF power amplifier, medium-speed switching, small-
sized motor drivers.
Features
· Large current capacity.
· Low collector to emitter saturation voltage.
· Very small-sized package permitting sets to be made
smaller and slimer.
Package Dimensions
unit:mm
2018A
[2SB1295/2SD1935]
( ) : 2SB1295
Specifications
C : Collector
B : Base
E : Emitter
SANYO : CP
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
(–)15
(–)15
(–)5
(–)0.8
(–)3
200
150
–55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min typ max
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE1
VCB=(–)12V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)50mA
135*
(–)100
(–)100
900*
(600)
hFE2 VCE=(–)2V, IC=(–)800mA
80
* : The 2SB1295/2SD1935 are classified by 50mA hFE as follows :
2SB1295 135 5 270 200 6 400 300 7 600
Marking: 2SB1295 : UL/2SD1935 : CT
hFE rank: 2SB1295 : 5, 6, 7/2SD1935 : 5, 6, 7, 8
Unit
V
V
V
A
A
mW
˚C
˚C
Unit
nA
nA
2SB1935 135 5 270 200 6 400 300 7 600 450 8 900
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1598HA (KT)/4207TA, TS No.2516–1/4


B1295 데이터시트, 핀배열, 회로
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
2SB1295/2SD1935
Symbol
Conditions
fT VCE=(–)2V, IC=(–)50mA
Cob VCB=(–)10V, f=1MHz
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)5mA, IB=(–)0.5mA
IC=(–)400mA, IB=(–)20mA
IC=(–)400mA, IB=(–)20mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
Ratings
min typ
200
(300)
(15)
10
(–)10
(–)100
(–)0.9
(–)15
(–)15
(–)5
max
(–)25
(–)200
(–)1.2
Unit
MHz
MHz
pF
pF
mV
mV
V
V
V
V
No.2516–2/4




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: Sanyo

( sanyo )

B1295 data

데이터시트 다운로드
:

[ B1295.PDF ]

[ B1295 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


B1295

PNP Transistor - 2SB1295 - Sanyo



B1296

PNP Transistor - 2SB1296 - Sanyo