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G40N120CE 반도체 회로 부품 판매점

TSG40N120CE



Taiwan Semiconductor 로고
Taiwan Semiconductor
G40N120CE 데이터시트, 핀배열, 회로
TO-264
Pin Definition:
1. Gate
2. Collector
3. Emitter
TSG40N120CE
N-Channel IGBT with FRD.
PRODUCT SUMMARY
VCES (V)
VGES (V)
1200
±20
IC (A)
40
General Description
The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers
superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This
device is well suited for the resonant or soft switching application such as induction heating, microwave oven,
etc.
Features
Block Diagram
1200V NPT Trench Technology
High Speed Switching
Low Conduction Loss
Ordering Information
Part No.
TSG40N120CE C0
Package
TO-264
Packing
25pcs / Tube
NPT Trench IGBT
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Current
TC=25oC
TC=100oC
VCES
VGES
IC
Pulsed Collector Current *
Diode Forward Current (TC=100)
Diode Pulse Forward Current
Max Power Dissipation
TJ=25oC
TJ=100oC
Operating Junction Temperature
Storage Temperature Range
* Repetitive rating: Pulse width limited by max. junction temperature
ICM
IF
IFM
PD
TJ
TSTG
Limit
1200
±20
64
40
120
40
240
208
83
-55 to +150
-55 to +150
Unit
V
V
A
A
A
A
A
W
ºC
oC
1/10 Version: B12


G40N120CE 데이터시트, 핀배열, 회로
TSG40N120CE
N-Channel IGBT with FRD.
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Case
IGBT
DIODE
RӨJC
Thermal Resistance - Junction to Ambient
RӨJA
Electrical Specifications (Tc=25oC unless otherwise noted)
Parameter
Conditions
Symbol
Static
Collector-Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Dynamic
VGE = 0V, IC = 1mA
VCE = 1200V, VGE = 0V
VGE = 20V, VCE = 0V
VGE = VCE, IC = 40mA
VGE = 15V,IC =40A, TJ=25ºC
VGE = 15V,IC =40A, TJ=125ºC
BVCES
ICES
IGES
VGE(TH)
VCE(SAT)
VCE(SAT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VCE = 30V, VGE = 0V,
f = 1.0MHz
CIES
COES
CRES
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 600V, IC = 40A,
RG = 5, VGE = 15V
Inductive Load, TJ=25oC
VCC = 600V, IC = 40A,
RG = 5, VGE = 15V
Inductive Load, TJ=125oC
VCC = 600V, IC = 40A,
VGE = 15V
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Limit
0.6
2.2
25
Min Typ
1200
--
--
4.0
--
--
--
--
--
6.0
2
2.5
-- 5150
-- 150
-- 100
-- 41
-- 82
-- 200
-- 85
-- 5.8
-- 1.5
-- 7.3
-- 45
-- 76
-- 212
-- 189
-- 5.6
-- 3.3
-- 8.9
-- 210
-- 50
-- 115
Unit
oC/W
Max Unit
--
1
±250
8.0
2.8
--
V
mA
nA
V
V
V
--
-- pF
--
--
--
--
170
8.7
2.3
11
--
--
--
--
5
5
13.4
315
75
173
nS
mJ
nS
mJ
nC
2/10 Version: B12




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