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Toshiba |
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5106
2SC5106
For VCO Application
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
20
10
3
15
30
150
125
−55 to 125
V
V
V
mA
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Unit: mm
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
1 2010-01-26
2SC5106
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Insertion gain
Output capacitance
Reverse transfer capacitance
Collector-base time constant
Symbol
Test Condition
Min
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 5 V, IC = 5 mA
fT
⎪S21e⎪2
VCE = 5 V, IC = 5 mA
VCE = 5 V, IC = 5 mA, f = 1 GHz
Cob
Cre
Cc・rbb’
VCB = 5 V, IE = 0, f = 1 MHz (Note 2)
VCB = 5 V, IC = 3 mA, f = 30 MHz
⎯
⎯
80
4
7
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
6
11
0.75
0.55
6
Max
1
1
240
⎯
⎯
⎯
0.95
15
Unit
μA
μA
GHz
dB
pF
pF
ps
Note 1: hFE classification O: 80 to 160, Y: 120 to 240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Marking
2 2010-01-26
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