파트넘버.co.kr C5065 데이터시트 PDF


C5065 반도체 회로 부품 판매점

NPN Transistor - 2SC5065



Toshiba 로고
Toshiba
C5065 데이터시트, 핀배열, 회로
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5065
2SC5065
VHF to UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.1 dB, |S21e|2 = 12 dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
20
12
3
15
30
100
125
55 to 125
V
V
V
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 mA, f = 500 MHz
VCE = 5 V, IC = 10 mA, f = 1 GHz
VCE = 5 V, IC = 3 mA, f = 500 MHz
VCE = 5 V, IC = 3 mA, f = 1 GHz
Min Typ. Max Unit
5 7 GHz
17
dB
8.5 12
1
dB
1.1 2.0
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 5 V, IC = 10 mA
⎯ ⎯ 1 μA
⎯ ⎯ 1 μA
80 240
Output capacitance
Reverse transfer capacitance
Cob
0.7
VCB = 5 V, IE = 0, f = 1 MHz (Note 2)
pF
Cre
0.45 0.9
pF
Note 1: hFE classification O: 80 to 160, Y: 120 to 240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1 2008-12-05


C5065 데이터시트, 핀배열, 회로
Marking
2SC5065
2 2008-12-05




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C5065 transistor

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