C4249 반도체 회로 부품 판매점
NPN Transistor - 2SC4249
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 Toshiba |
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4249
2SC4249
TV VHF RF Amplifier Applications
Unit: mm
· High gain: Gpe = 24dB (typ.) (f = 200 MHz)
· Low noise: NF = 2.0dB (typ.) (f = 200 MHz)
· Excellent forward AGC characteristics
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
30
30
3
20
10
100
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Reverse transfer capacitance
Transition frequency
Power gain
Noise figure
AGC voltage
(Note)
ICBO
IEBO
V (BR) CEO
hFE
Cre
fT
Gpe
NF
VAGC
VCB = 25 V, IE = 0
VEB = 2 V, IC = 0
IC = 1 mA, IB = 0
VCE = 10 V, IC = 2 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 10 V, IC = 2 mA
VCC = 12 V, VAGC = 1.4 V
f = 200 MHz (Figure 1)
VCC = 12 V, GR = 30dB
f = 200 MHz
¾ ¾ 100 nA
¾ ¾ 100 nA
30 ¾ ¾
V
60 150 300
¾ 0.35 0.5
pF
400 650 ¾ MHz
20 24 28 dB
¾ 2.0 3.2 dB
3.6 4.4 5.1
V
Note: VAGC measured by test circuit shown in Figure 1 when power gain is reduced to 30dB compared that of VAGC
at 1.4 V.
1 2003-03-27
2SC4249
L1: RF coil M-15 T (TOKO Inc.) or equivalent
L2: RF coil M-25 T (TOKO Inc.) or equivalent
Figure 1 200 MHz Gpe, NF Test Circuit
Marking
2 2003-03-27
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제조업체: Toshiba
( toshiba )
C4249 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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