파트넘버.co.kr C4006 데이터시트 PDF


C4006 반도체 회로 부품 판매점

NPN Transistor - 2SC4006



Sanyo 로고
Sanyo
C4006 데이터시트, 핀배열, 회로
Ordering number:EN2272A
NPN Planar Type Silicon Darlington Transistor
2SC4006
Driver Applications
Applications
· Suitable for use in switching of L load (motor
drivers, printer hammer drivers, relay drivers).
Package Dimensions
unit:mm
2041A
Features
· High DC current gain.
· Large current capacity and wide ASO.
· On-chip Zener diode of 50±8V between collector and
base.
· Uniformity in collector-to-base breakdown voltage
due to accurate impurity diffusion process.
· Large inductive load handling capability.
· Micaless package facilitating mounting.
Specifications
[2SC4006]
4.5
10.0 2.8
3.2
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
* : On-chip Zener diode of 50±8V
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25˚C
Conditions
Ratings
42*
42*
6
3
6
0.6
2.0
20
150
–55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
VCB=30V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1.5A
VCE=5V, IC=1.5A
IC=1.5A, IB=6mA
IC=1.5A, IB=6mA
Ratings
min typ
2000
4000
180
1.0
max
10
2
1.5
2.0
Unit
µA
mA
MHz
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1598HA (KT)/4277TA, TS No.2272–1/3


C4006 데이터시트, 핀배열, 회로
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Inductive Load Handling Capability
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SC4006
Symbol
Conditions
V(BR)CBO
V(BR)CEO
Es/b
ton
tstg
tf
IC=0.1mA, IE=0
IC=1mA, RBE=
L=100mH, RBE=100
See specified Test Circuit.
VCC=20V, IC=1.5A, IB1=–IB2=6mA
See specified Test Circuit.
VCC=20V, IC=1.5A, IB1=–IB2=6mA
See specified Test Circuit.
VCC=20V, IC=1.5A, IB1=–IB2=6mA
Es/b Test Circuit
Ratings
min typ
42 50
42 50
30
max
58
58
Unit
V
V
mJ
0.2 µs
3.0 µs
0.7 µs
No.2272–2/3




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