파트넘버.co.kr BTS50055-1TMA 데이터시트 PDF


BTS50055-1TMA 반도체 회로 부품 판매점

Smart Highside High Current Power Switch



Infineon Technologies 로고
Infineon Technologies
BTS50055-1TMA 데이터시트, 핀배열, 회로
Data Sheet BTS50055-1TMA
Smart Highside High Current Power Switch Reversave
Features
Overload protection
Current limitation
Short circuit protection
Over temperature protection
Over voltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads 1)
Low ohmic inverse current operation
Reversave(Reverse battery protection)
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of Vbb protection 2)
Electrostatic discharge (ESD) protection
Green product (RoHS compliant)
AEC qualified
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(AZ)
VON(CL)
Vbb(on)
RON
IL(ISO)
IL(SC)
IL : IIS
62 V
42 V
5.0 ... 34 V
6.0 m
70 A
130 A
14 000
PG-TO220-7-4
Application
Power switch with current sense diagnostic
feedback for 12 V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
Replaces electromechanical relays, fuses and discrete circuits
1
SMD
7
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOSchip on chip technology. Providing embedded protective functions.
4 & Tab
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
R bb
+ Vbb
Voltage
sensor
3 IN
ESD
Logic
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
OUT 1,2,6,7
IL
Load
I IN Temperature
sensor
VIN
VIS
Logic GND
I IS
IS
5
RIS
PROFET
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
Page 1of 18
Load GND
2010-April-27


BTS50055-1TMA 데이터시트, 핀배열, 회로
Pin
1
2
3
4
5
6
7
Data Sheet BTS50055-1TMA
Symbol
OUT
OUT
IN
Vbb
IS
OUT
OUT
Function
O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications. 3)
O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications. 3)
I Input; has an internal pull up; activates the power switch in case of short to
ground
+
Supply voltage; positive power supply voltage; tab and pin 4 are internally
shorted; in high current applications use the tab 4).
S Sense Output; Diagnostic feedback; provides a sense current proportional
to the load current; zero current on failure (see Truth Table on page 7)
O
Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications. 3)
O
Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications. 3)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Supply voltage (over voltage protection see page 4)
Supply voltage for short circuit protection,
Tj,start =-40 ...+150°C: (see diagram on page 10)
Load current (short circuit current, see page 5)
Load dump protection VLoadDump = VA + Vs, VA = 13.5 V
RI5) = 2 , RL = 0.54 , td = 200 ms,
IN, IS = open or grounded
Vbb
Vbb
IL
VLoad dump6)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC 25 °C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.,
IL = 20 A, ZL = 7.5 mH, 0 , see diagrams on page 10
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 k
Tj
Tstg
Ptot
EAS
VESD
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 8 and 9
IIN
IIS
Values Unit
42 V
34 V
self-limited A
75 V
-40 ...+150
-55 ...+150
170
°C
W
1.5 J
4 kV
+15 , -250 mA
+15 , -250
3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
4) Otherwise add up to 0.7 m(depending on used length of the pin) to the RON if the pin is used instead of the
tab.
5) RI = internal resistance of the load dump test pulse generator.
6) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Infineon Technologies AG
Page 2
2010-April-27




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