파트넘버.co.kr ITS4200S-ME-N 데이터시트 PDF


ITS4200S-ME-N 반도체 회로 부품 판매점

Smart High-Side NMOS-Power Switch



Infineon 로고
Infineon
ITS4200S-ME-N 데이터시트, 핀배열, 회로
ITS4200S-ME-N
Smart High-Side NMOS-Power Switch
Data Sheet
Rev 1.0, 2012-09-01
Standard Power


ITS4200S-ME-N 데이터시트, 핀배열, 회로
Smart High-Side NMOS-Power Switch
ITS4200S-ME-N
1 Overview
Features
• CMOS compatible input
• Switching all types of resistive, inductive and capacitive loads
• Fast demagnetization of inductive loads
• Very low standby current
• Optimized Electromagnetic Compatibility
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown with restart
• Overvoltage protection (including load dump)
• Reverse battery protection with external resistor
• Loss of GND and loss of Vbb protection
• Electrostatic Discharge Protection (ESD)
• Green Product (RoHS compliant)
SOT-223-4
ITS4200S-ME-N is not qualified and manufactured according to the requirements of Infineon Technologies with
regards to automotive and/or transportation applications.
Description
The ITS4200S-ME-N is a protected single channel Smart High-Side NMOS-Power Switch in a SOT-223-4
package with charge pump and CMOS compatible input. The device is monolithically integrated in Smart
technology.
Product Summary
Overvoltage protection VSAZ min= 41V
Operating voltage range: 5V VS34V
On-state resistance RDSON typ = 160m
Nominal load current ILNOM = 0.7A
Operating Temperature range: Tj = -40°C to 125°C
Standby Current: ISSTB= 25µA
Application
• All types of resistive, inductive and capacitive loads
• Power switch for 12V and 24V DC applications with CMOS compatible control interface
• Driver for electromagnetic relays
• Power managment for high-side-switching with low current consumption in OFF-mode
Type
ITS4200S-ME-N
Package
SOT-223-4
Marking
I200SN
Data Sheet
2 Rev 1.0, 2012-09-01




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