파트넘버.co.kr B816 데이터시트 PDF


B816 반도체 회로 부품 판매점

PNP Transistor - 2SB816



Sanyo 로고
Sanyo
B816 데이터시트, 핀배열, 회로
Ordering number:677D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB816/2SD1046
For LF Power Amplifier, 50W Output
Large Power Switching Applications
Features
· Capable of being mounted easily because of one-
point fixing type plastic molded package (Inter-
changeable with TO-3).
· Wide ASO because of built-in ballast resistance.
· Goode dependence of fT on current and good HF
characteristic.
Package Dimensions
unit:mm
2022A
[2SB816/2SD1046]
( ) : 2SB816
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)1A
VCE=(–)5V, IC=(–)5A
VCE=(–)5V, IC=(–)1A
VCB=(–)10V, f=1MHz
* : The 2SB816/2SD1046 are classified by 1A hFE as follows :
60 D 120 100 E 200
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Ratings
(–)150
(–)120
(–)6
(–)8
(–)12
80
150
–40 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
60*
20
15
(220)
160
max
(–)0.1
(–)0.1
200*
Unit
mA
mA
MHz
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/4017KI/6284KI, MT No.677–1/4


B816 데이터시트, 핀배열, 회로
Parameter
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
Swicthing Time Test Circuit
2SB816/2SD1046
Symbol
Conditions
VBE
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
VCE=(–)5V, IC=(–)1A
IC=(–)5A, IB=(–)0.5A
IC=(–)5mA, IE=0
IC=(–)5mA, RBE=
IC=(–)50mA, RBE=
IE=(–)5mA, IC=0
See specified test circuit.
tf See specified test circuit.
tstg See specified test circuit.
Ratings
min typ
(–)150
(–)120
(–)120
(–)6
1.0
(0.22)
0.22
(0.37)
1.02
(0.93)
6.66
max
1.5
2.0
Unit
V
V
V
V
V
V
µs
µs
µs
µs
µs
µs
No.677–2/4




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