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PDF D330 Data sheet ( Hoja de datos )
| Número de pieza | D330 | |
| Descripción | NPN Transistor - 2SD330 | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number:397E
PNP/NPN Triple Diffused Planar Silicon Transistors
2SB514/2SD330
50V/2A Low-Frequency Power Amplifier
Applications
Features
· Especially suited for use in output stage of 10W AF
Power amplifier.
· Complementary pair with the 2SB514 and 2SD313.
Package Dimensions
unit:mm
2010C
[2SB514/2SD330]
( ) : 2SB514
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)20V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE1 VCE=(–)2V, IC=(–)1A
hFE2 VCE=(–)2V, IC=(–)0.1A
Gain-Bandwidth Product
fT VCE=(–)5V, IC=(–)0.5A
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)2A, IB=(–)0.2A
Base-to-Emitter Voltage
VBE
IC=(–)1A, VCE=–(–)5V
* : The 2SB514/2SD330 are classified by 1A hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320
JEDEC : TO-220AB
EIAJ : SC-46
1 : Base
2 : Collector
3 : Emitter
Ratings
(–)50
(–)50
(–)5
(–)2
(–)5
1.75
20
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
40*
35
8
max
(–)0.1
(–)1.0
320*
(–)1.0
(–)1.5
Unit
mA
mA
MHz
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/5231MH/3257TA/7193KI, TS(KOTO) No.397–1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet D330.PDF ] | |
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