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Fairchild Semiconductor |
March 2005
FDS6670AS
30V N-Channel PowerTrench® SyncFET™
General Description
The FDS6670AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6670AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
• Low side notebook
Features
• 13.5 A, 30 V. RDS(ON) max= 9.0 mΩ @ VGS = 10 V
RDS(ON) max= 11.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (27nC typical)
• High performance trench technology for extremely low
RDS(ON) and fast switching
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6670AS
FDS6670AS
13’’
FDS6670AS
FDS6670AS_NL (Note 4)
13’’
©2005 Fairchild Semiconductor Corporation
5
6
7
8
Ratings
30
±20
13.5
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2500 units
FDS6670AS Rev A (X)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Gate Resistance
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
Qg(TOT)
Total Gate Charge at Vgs=10V
Qg Total Gate Charge at Vgs=5V
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VGS = 0 V, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VGS = 10 V,
ID = 13.5 A
VGS = 4.5 V, ID = 11.2 A
VGS=10 V, ID =13.5A, TJ=125°C
VGS = 10 V,
VDS = 5 V
VDS = 10 V,
ID = 13.5 A
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
VDD = 15 V, ID = 13.5 A,
Min
30
1
50
Typ Max Units
V
31 mV/°C
500
±100
µA
nA
1.7
–3.3
7.5
9
10
66
3V
mV/°C
9 mΩ
11.5
12.5
A
S
1540
440
160
2.1
pF
pF
pF
10 20
5 10
27 44
18 32
13 23
15 27
24 38
13 23
27 38
16 22
4.2
5.1
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
FDS6670AS Rev A (X)
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