A2062 반도체 회로 부품 판매점
PNP Transistor - 2SA2062
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 Sanyo Semicon Device |
Ordering number : ENN6987A
2SA2062 / 2SC5774
2SA2062 / 2SC5774
Features
• Large current capacitance.
• Wide ASO and high durability against breakdown.
• Adoption of MBIT process.
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
140V / 10A, AF70W
Output Applications
Specifications Note*( ) : 2SA2062
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE(1)
hFE(2)
fT
Cob
VBE
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=(--)160V, IE=0
VEB=(--)4V, IC=0
VCE=(--)5V, IC=(--)1A
VCE=(--)5V, IC=(--)5A
VCE=(--)5V, IC=(--)1A
VCB=(--)10V, f=1MHz
VCE=(--)5V, IC=(--)5A
IC=(--)5A, IB=(--)0.5A
IC=(--)5mA, IE=0
IC=(--)50mA, RBE=∞
IE=(--)5mA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
Ratings
(-)160
(-)140
(-)6
(-)10
(-)20
2.5
110
150
-55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Ratings
min typ
60
35
(10)15
(280)140
(--0.3)0.2
(--)160
(--)140
(--)6
(0.45)0.56
(1.75)3.3
(0.25)0.4
max
(--)0.1
(--)0.1
160
1.5
(--)2.0
Unit
mA
mA
MHz
pF
V
V
V
V
V
µs
µs
µs
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1503 TS IM TA-100929 / 62501 TS IM TA-3317, 3318 No.6987-1/4
2SA2062 / 2SC5774
Package Dimensions
unit : mm
2022A
15.6 3.2
14.0
4.8
2.0
1.6
2.0
1.0
12
0.6
3
5.45 5.45
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR
IB1
IB2
RB
50Ω +
100µF
VBE= --5V
IC=10IB1= --10IB2=5A
For PNP, the polarity is reversed.
OUTPUT
RL=
10Ω
+
470µF
VCC=50V
--16
2SA2062
--14
--12
--10
--8
IC -- VCE
--500mA
--400mA
--300mA
--200mA
--6 --100mA
--4
--40mA
--2 --20mA
0 IB=0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Collector-to-Emitter Voltage, VCE -- V IT03410
IC -- VBE
--8
2SA2062
--7 VCE= --5V
--6
--5
--4
--3
--2
--1
0
0
--0.5
--1.0
--1.5
Base-to-Emitter Voltage, VBE -- V IT03412
20
2SC5774
18
16
14
12
IC -- VCE
500mA
400mA
300mA
200mA
10
8 100mA
6
4 40mA
20mA
2
0 IB=0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT03411
IC -- VBE
8
2SC5774
7 VCE=5V
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT03413
No.6987-2/4
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A2062 transistor
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국내 전력반도체 판매점
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전화번호 : 051-319-2877
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